Design and Analysis of Cryocooled LNA Circuit with Low VSWR

GAO Fei; ZHANG Xiao-ping; CAO Bi-song; GAO Bao-xin

您当前的位置：

首页 >

文章列表页 >

Design and Analysis of Cryocooled LNA Circuit with Low VSWR

更新时间：2025-07-16

- Design and Analysis of Cryocooled LNA Circuit with Low VSWR
- Acta Electronica Sinica Vol. 33, Issue 9, Pages: 1626-1628(2005)
- 作者机构：
  
  1. 清华大学深圳研究生院,北京,100084
  2. 清华大学物理系,北京,100084
  3. 清华大学深圳研究生院北京,100084
  4. 清华大学物理系北京,100084
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN722.3
- Published：2005
- 稿件说明：
移动端阅览
GAO Fei, ZHANG Xiao-ping, CAO Bi-song, et al. Design and Analysis of Cryocooled LNA Circuit with Low VSWR[J]. Acta Electronica Sinica, 2005, 33(9): 1626-1628.
DOI：

GAO Fei, ZHANG Xiao-ping, CAO Bi-song, et al. Design and Analysis of Cryocooled LNA Circuit with Low VSWR[J]. Acta Electronica Sinica, 2005, 33(9): 1626-1628. DOI：

摘要

为用HEMT晶体管设计L波段低驻波比放大电路

本文用输入无源复反射系数在输出反射平面上的共轭匹配区表达式

将驻波比约束转化为无源匹配区域的映射.同时为了计算放大电路低温下噪声

通过有损输入模型导出了噪声的温度关系式.实测CDMA-830MHz高温超导前端放大器噪声温度小于30K

输入驻波比小于1.3

输出驻波比小于1.8

增益大于17dB.

Abstract

L band HEMT amplifiers applied inmobile communications must have low input VSWR

In this paper a graphic method is proposed to map the conjugated matched ΓL to Γs plane to find optimized matching network.To calculate cryocooled LNA's NF a lossy input network model is built and a temperature-dependent NF formula is obtained and verified experimentally.The cryocooled LNA in HTS front end is measured with Noise Temperature ＜30 K

VSWRi ＜1.3 and VSWRo ＜1.8

Gain ＞17dB.

关键词

Keywords

references

Views

1101

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰