Wide-Band Physical Model for RF Spiral Inductors on Silicon

REN Jun; YANG Fan; ZHENG Wei; YOU Huan-cheng; WANG Xiang-zhan; Li Li-ping; YANG Mo-hua

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Wide-Band Physical Model for RF Spiral Inductors on Silicon

更新时间：2025-07-16

- Wide-Band Physical Model for RF Spiral Inductors on Silicon
- Acta Electronica Sinica Vol. 34, Issue 8, Pages: 1517-1521(2006)
- 作者机构：
  
  电子科技大学,四川,成都,610054
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN454
- Published：2006
- 稿件说明：
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REN Jun, YANG Fan, ZHENG Wei, et al. Wide-Band Physical Model for RF Spiral Inductors on Silicon[J]. Acta Electronica Sinica, 2006, 34(8): 1517-1521.
DOI：

REN Jun, YANG Fan, ZHENG Wei, et al. Wide-Band Physical Model for RF Spiral Inductors on Silicon[J]. Acta Electronica Sinica, 2006, 34(8): 1517-1521. DOI：

摘要

针对高损耗硅衬底

源自部分元等效电路方法考虑了趋肤效应和邻近效应对螺旋电感中串联电感

、串联电阻

频率特性的制约

并基于全耦合变压器模型计入了复杂的衬底涡流损耗

从而建立了一种新的片上螺旋电感物理模型.通过与全波分析方法对比

验证了在20GHz范围内由该模型导出的等效电感

eff

、等效电阻R

eff

和Q

值误差仅在7%以内.该模型可望用于硅基射频集成电路中电感进一步的理论探讨和优化设计.

Abstract

For monolithic RF spiral inductor on high-loss silicon substrate

a novel physical model is proposed

in which functions of both skin effect and proximity effect to frequency-dependent series parameters

and

are accounted in the light of modified partial equivalent element circuit methodology and

in the meanwhile

complicated eddy current losses in the substrate are captured by a full-coupled transformer loop.Up to 20GHz

the model reveals quite good accuracy within 7% with data from full-wave electromagnetic filed simulator

including equivalent inductor

eff

resistor

eff

and quality factor

and

hopefully

it can be applied to further theory research and optimum design of RFIC spiral inductor on Si.

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Related Institution

College of Computer and Communication Engineering，China University of Petroleum(East China)

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School of Mechanical and Antomotive EngineeringHefei University of Techno logyHefeiAnhui 230009China

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