Rectangular Defect Model and Critical Area Computation of Real Defect Outlines in VLSI

WANG Jun-ping; HAO Yue

您当前的位置：

首页 >

文章列表页 >

Rectangular Defect Model and Critical Area Computation of Real Defect Outlines in VLSI

更新时间：2025-07-16

- Rectangular Defect Model and Critical Area Computation of Real Defect Outlines in VLSI
- Acta Electronica Sinica Vol. 34, Issue 11, Pages: 1974-1977(2006)
- 作者机构：
  
  1. 西安电子科技大学微电子研究所,陕西,西安,710071
  2. 西安电子科技大学通信工程学院,陕西,西安,710071
  3. 西安电子科技大学微电子研究所陕西西安,710071
  4. 西安电子科技大学通信工程学院陕西西安,710071
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN405
- Published：2006
- 稿件说明：
移动端阅览
WANG Jun-ping, HAO Yue. Rectangular Defect Model and Critical Area Computation of Real Defect Outlines in VLSI[J]. Acta Electronica Sinica, 2006, 34(11): 1974-1977.
DOI：

WANG Jun-ping, HAO Yue. Rectangular Defect Model and Critical Area Computation of Real Defect Outlines in VLSI[J]. Acta Electronica Sinica, 2006, 34(11): 1974-1977. DOI：

摘要

在集成电路(IC)中

为了进行有效的成品率估计和故障分析

与光刻有关的缺陷形状通常假设为圆模型.然而

真实缺陷的形状多种多样.本文提出一种真实缺陷的矩形模型及与之相关的关键面积计算模型

该模型既考虑了真实缺陷的形状又考虑了IC版图布线的特点.在缺陷引起故障概率预测方面

仿真结果表明新模型比圆模型更接近真实缺陷引起的故障概率.

Abstract

In integrated circuits

the defects associated with photolithography will generally be assumed to take the shape of circular discs in order to perform the efficient estimation of yield and fault analysis.However

real defects exhibit a great variety of shapes.This paper provides a rectangular model of real defects and the model of computing the critical area involved

which take the shape of real defects as well as the features of the layout routing into account.In the aspect of the prediction of fault probability

the simulation results show that the new model may predict the fault probability caused by real defects more accurately than the circular model does.

关键词

Keywords

references

Views

1259

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Y/R Model of Integrated Circuits Based on the Open Circuit Fault of Interconnections

Estimation of Early-Life Reliability Based on Integrated-Circuit Yield Model

Relation Between Reliability and Yield of IC's Based on Discrete Model

A Relation Model Between Integrated Circuit Yield and Reliability Based on the Defect’s Uniform Distribution

Yield Driven CAD of MMIC

Related Author

MA Pei-jun

HAO Yue

ZHAO Tian-xu

HAO Yue

DUAN Xu-chao

ZHAO Tian-xu

MA Pei-jun

Related Institution

Department of mathematics of Baoji college of Arts and scienceBaojiShaanxi 721007China

Microelectronics Institute of Xidian University Xi'anShaanxi 710071China

Department of mathematics of Baoji college of Arts and science

Microelectronics Institute of Xidian University Xi'an

Microelectronics Inst.of Xidian Univ.Xi'anShaanxi710071China

⁰