It is analyzed about the damage mechanism of ionization and displacement radiation on CCDs

The physical model and the numerical processing method are set up about a buried channel CCD

which has been used to simulate the dynamic transfer process of CCD with the three phrases pulse driver by semiconductor device simulator MEDICI.It is also calculated on the charge transfer efficiency of CCDs irradiated by 1MeV and 14MeV neutrons.An offline measure system is designed for radiation damage effects on linear CCDs based on CPLD.The experiments of ionization and displacement radiation effects are carried out on the commercial linear CCD by Co-60 source and neutron pulse from Xian Pulse Reaction with our self-designed test system

and get some valuable results of dark voltage and saturation voltage and charge transfer efficiency and cells inequality varied with total dose and neutron fluence for the devices.