Monte Carlo Study of the Mechanisms of THz Radiation from Narrow-Gap Semiconductor n-InAs

LIU Dong-feng

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Monte Carlo Study of the Mechanisms of THz Radiation from Narrow-Gap Semiconductor n-InAs

更新时间：2025-07-16

- Monte Carlo Study of the Mechanisms of THz Radiation from Narrow-Gap Semiconductor n-InAs
- Acta Electronica Sinica Vol. 35, Issue 8, Pages: 1458-1461(2007)
- 作者机构：
  
  1. 广东工业大学信息工程学院电子信息系,广东,广州,510006
  2. 广东工业大学信息工程学院电子信息系广东广州,510006
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386
- Published：2007
- 稿件说明：
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LIU Dong-feng. Monte Carlo Study of the Mechanisms of THz Radiation from Narrow-Gap Semiconductor n-InAs[J]. Acta Electronica Sinica, 2007, 35(8): 1458-1461.
DOI：

LIU Dong-feng. Monte Carlo Study of the Mechanisms of THz Radiation from Narrow-Gap Semiconductor n-InAs[J]. Acta Electronica Sinica, 2007, 35(8): 1458-1461. DOI：

摘要

本文采用系综Monte Carlo方法模拟了窄禁带n-InAs和宽禁带n-GaAs的THz时域波形

从理论上证实了n-InAs的THz辐射机制是光丹培场的作用.通过定量给出表面电场和光丹培场在半导体中的空间分布

我们发现导致n-InAs的THz辐射效率比n-GaAs高的一个重要原因是:在被大多数光生载流子占居的非耗尽层区域

n-InAs的电场比n-GaAs的大得多.而以前的研究工作都没有认识到这一点.

Abstract

Using the ensemble Monte Carlo method

we have simulated the THz temporal waveforms from narrow-gap semiconductor n-InAs and wide-gap semiconductor n-GaAs.The radiation mechanism for n-InAs is confirmed as the photo-Dember field

and the reason for the higher radiation efficiency of n-InAs than that of n-GaAs is:in the area occupied by the major part of photo-generated carriers

the electric field in n-GaAs is much smaller than that in n-InAs.This reason was not mentioned in all previous studies.

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Related Author

LIU Dong-feng

QIN Jia-yin

ZHI Xiao-li

LU Xin-da

Related Institution

Department of Electronics and Communication Engineering,the State Key Laboratory of Optoelectronic Materials and Technologies,Zhongshan University

Dept. of Computer Science, Shanghai Jiaotong Vniv.

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