您当前的位置:
首页 >
文章列表页 >
Genetic-Algorithm-Based Model Parameter Extraction for Sub-100nm SOI MOSFET
更新时间:2025-07-16
    • Genetic-Algorithm-Based Model Parameter Extraction for Sub-100nm SOI MOSFET

    • Acta Electronica Sinica   Vol. 35, Issue 11, Pages: 2033-2037(2007)
    • CLC: TN432
    • Published:2007

    移动端阅览

  • LI Zun-chao, ZHANG Rui-zhi, ZHANG Xiao-juan, et al. Genetic-Algorithm-Based Model Parameter Extraction for Sub-100nm SOI MOSFET[J]. Acta Electronica Sinica, 2007, 35(11): 2033-2037. DOI:

  •  
  •  
icon
试读结束,您可以激活您的VIP账号继续阅读。
去激活 >
icon
试读结束,您可以通过登录账户,到个人中心,购买VIP会员阅读全文。
已是VIP会员?
去登录 >

0

Views

1336

下载量

2

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Review of Microwave HBT Modeling Technique Research
A Wafer-Level Vacuum Packaged MEMS Electric Field Sensor Based on SOI-SOG Bonding
Research on Mextram Model of Germanium Silicon Heterojunction Bipolar Transistor with RF Avalanche Effect
Research on Indoor Millimeter Wave 3D-MIMO Wireless Channel Parameter Extraction and Multipath Cluster Characteristics
HMM Structure Optimization Based on Genetic Nonparametric MDL-BW Method

Related Author

SUN Ling-ling
LIU Jun
LIU Jun
XIA Shan-hong
PENG Chun-rong
CHU Zhao-zhi
LEI Hu-cheng
LIU Xiang-ming

Related Institution

Microelectronic CAD Center,Hangzhou University of Electronic Science and Technology
State Key Laboratory of Transducer Technology, Aerospace Information Research Institute, Chinese Academy of Sciences
School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences
Institute of Microelectronics of Chinese Academy of Sciences
Department of Electronic Engineering, Xi’an University of Technology
0