The Influence of Trapping Effect on Frequency Characteristics in 4H-SiC MESFETs L Hong-liang1,ZHANG Yi-men1,ZHANG Yu-ming1,CHE Yong2,WANG Yue-hu 1,SHAO Ke1

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The Influence of Trapping Effect on Frequency Characteristics in 4H-SiC MESFETs L Hong-liang¹,ZHANG Yi-men¹,ZHANG Yu-ming¹,CHE Yong²,WANG Yue-hu1,SHAO Ke¹

更新时间：2025-07-16

- The Influence of Trapping Effect on Frequency Characteristics in 4H-SiC MESFETs L Hong-liang¹,ZHANG Yi-men¹,ZHANG Yu-ming¹,CHE Yong²,WANG Yue-hu1,SHAO Ke¹
- Acta Electronica Sinica Vol. 36, Issue 5, Pages: 933-936(2008)
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  CLC： TN304.2
- Published：2008
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The Influence of Trapping Effect on Frequency Characteristics in 4H-SiC MESFETs L Hong-liang¹,ZHANG Yi-men¹,ZHANG Yu-ming¹,CHE Yong²,WANG Yue-hu1,SHAO Ke¹[J]. Acta Electronica Sinica, 2008, 36(5): 933-936.
DOI：

The Influence of Trapping Effect on Frequency Characteristics in 4H-SiC MESFETs L Hong-liang¹,ZHANG Yi-men¹,ZHANG Yu-ming¹,CHE Yong²,WANG Yue-hu1,SHAO Ke¹[J]. Acta Electronica Sinica, 2008, 36(5): 933-936. DOI：

摘要

针对4H-SiC 射频MESFET中的陷阱效应

建立了基于解析模型的器件小信号参数模型

引入能够反映陷阱影响的参数

″ 、g

″ 、C

等

从而能够由此分析器件特性随频率偏移的情况.对沟道缓冲层界面深能级陷阱的分析表明

4H-SiC MESFET的跨导既有正向偏移

也有负向偏移.偏移频率在室温下不足1Hz

但在600K的温度下则可达到MHz的量级.结合自热效应模型

论文还分析了栅、漏极偏置和温度对器件频率偏移特性的影响.模拟结果表明

随着温度的上升

偏移频段上升.本文的模拟分析对器件的设计提供了理论上的依据.

Abstract

Based on the small signal equivalent circuit of SiC MESFETs

the trapping effect has been investigated in detail.The elements of R

″

″ and C

have been involved in and the trapping-emission mechanism is discussed in detail.Both positive and negative frequency dispersions of transconductance are simualted and analyzed with deep level traps located at the channel/buffer interface.The dispersion frequency is less than 1Hz at room temperature.However

with increasing temperature

the dispersion frequency increases can be of the order of MHz at 600K.By combining modeling techniques

material physics and self

-heating effects

the influences of the applied voltage and self-heating effect are analyzed.The simulation indicates that the dispersion frequency increases with elevated temperature.The proposed model is valuable for the analysis of frequency dispersion in the device.

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