A Fast-Transient Response and Low-Quiescent Current CMOS Low-Dropout Regulator

LI Yan-ming; LAI Xin-quan; JIA Xin-zhang; CAO Yu; YE Qiang

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A Fast-Transient Response and Low-Quiescent Current CMOS Low-Dropout Regulator

更新时间：2025-07-16

- A Fast-Transient Response and Low-Quiescent Current CMOS Low-Dropout Regulator
- Acta Electronica Sinica Vol. 37, Issue 5, Pages: 1130-1135(2009)
- 作者机构：
  
  1. 西安电子科技大学电路CAD研究所,陕西,西安,710071
  2. 西安电子科技大学微电子研究所,陕西,西安,710071
  3. 西安电子科技大学电路CAD研究所陕西西安,710071
  4. 西安电子科技大学微电子研究所陕西西安,710071
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN432
- Published：2009
- 稿件说明：
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LI Yan-ming, LAI Xin-quan, JIA Xin-zhang, et al. A Fast-Transient Response and Low-Quiescent Current CMOS Low-Dropout Regulator[J]. Acta Electronica Sinica, 2009, 37(5): 1130-1135.
DOI：

LI Yan-ming, LAI Xin-quan, JIA Xin-zhang, et al. A Fast-Transient Response and Low-Quiescent Current CMOS Low-Dropout Regulator[J]. Acta Electronica Sinica, 2009, 37(5): 1130-1135. DOI：

摘要

设计了一种具有快速瞬态响应能力的低漏失稳压器

利用提出的一种瞬态响应加速(Transient Response Enhancement

TRE)电路

有效地提高了稳压器的瞬态响应速度

而且瞬态响应速度的提高并不增加静态电流.设计的LDO电路采用0.5μm标准CMOS工艺投片验证

芯片面积为0.49mm

.该LDO空载下的静态电流仅23μA

最大带载200mA.在1μF输出电容、200mA/100ns负载阶跃变化时的最大瞬态输出电压变化量小于3.5％.

Abstract

A low-dropout regulator (LDO) with fast-transient response speed is presented by utilizing the proposed transient response enhancement (TRE) circuit

which doesn't bring the quiescent current increase.The proposed LDO has been fabricated in a 0.5 μm standard CMOS process

and the die area is 0.49mm

.The proposed LDO dissipates 23 μA quiescent current at no-load condition and is able to deliver up to 200mA load current.With a 1 μF output capacitor

the maximum transient output-voltage variation is within 3.5% of the output voltage with load step changes of 200mA/100ns.

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刘健

陈治明

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Dept. of Automation Engineering, Xi’an University of Technology

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