With the development of IC to deep sub-micron and nanometer technology

plasma damage by charging to the CMOS devices

especially to the ultra thin gate oxide becomes more and more prominent.The mechanisms of plasma damage and antenna effect are analyzed in this paper.Capacitors and devices with different antenna ratio

composed of poly

contact and metal

are designed

and embed with process.And the test structures are discussed and those results are obvious and sensitive

achieving the wafer level process monitor of plasma charging damage in ultra-thin gate oxide.The results show that the plasma damage changes with process.Once the antenna ratio is over 10

3

the plasma damage becomes easily to be found.Meantime it could be found which process step induced the charging damage is serious

what studied in this paper offers scient

ific references to increase the gate oxide ability against the plasma charging damage.