Fabricated in a standard 0.35 μm CMOS process

a new type detector designed for high energy particle tracking was studied in this work.The detector is based on monolithic CMOS active pixel sensor (MAPS) technology.Using standard CMOS process

signal processing circuits are integrated on the same substrate as the sensors and correlated double sampling (CDS) operation is realized inside pixel.The prototype consists of a 128×32 pixel array and pixel pitch is 25×25 square of micrometer.Measured by a radioactive source

55

Fe

the temporal noise is only about 12 electrons and the residual offset is only about 4 electrons.The charge-to-voltage conversion factor

(CVF) is about 60 μV/e

-

.During the tests

readout speed reaches 12 μ /frame.