The structure of SiGeC p-i-n power diodes with ultra-low leakage current and ultra-fast recovery characteristics is presented.Based on the current transport mechanism of heterojunction

SiGeC diodes achieve a low on-state voltage drop under high current density and improved reverse recovery characteristics as well as low reverse leakage current.Compared to lifetime control technology of minority carrier

the contradictions among decreasing on-state voltage

reducing reverse leakage current and shorting reverse recovery time are coordinated effectively.The reverse recovery characteristics under different temperature show that the reverse recovery times of SiGeC diodes are shortened by 1/3 at 350K and shortened by more than 40% at 400K

compared to SiGe diodes with the same structure.The thermal stability of the devices is improved significantly

which reduces the restrictions on subsequent process and is of benefit to power integration.