NBTI Induced SET Pulse Broadening in the Production and Propagation

CHEN Jian-jun; CHEN Shu-ming; LIANG Bin; LIU Zheng; LIU Bi-wei; QIN Jun-rui

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NBTI Induced SET Pulse Broadening in the Production and Propagation

更新时间：2025-07-16

- NBTI Induced SET Pulse Broadening in the Production and Propagation
- Acta Electronica Sinica Vol. 39, Issue 5, Pages: 996-1001(2011)
- 作者机构：
  
  国防科技大学计算机学院,湖南,长沙,410073
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN306
- Published：2011
- 稿件说明：
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CHEN Jian-jun, CHEN Shu-ming, LIANG Bin, et al. NBTI Induced SET Pulse Broadening in the Production and Propagation[J]. Acta Electronica Sinica, 2011, 39(5): 996-1001.
DOI：

CHEN Jian-jun, CHEN Shu-ming, LIANG Bin, et al. NBTI Induced SET Pulse Broadening in the Production and Propagation[J]. Acta Electronica Sinica, 2011, 39(5): 996-1001. DOI：

摘要

本文研究了负偏置温度不稳定性(NBTI)对单粒子瞬态(SET)脉冲产生与传播过程的影响.研究结果表明:NBTI能够导致SET脉冲在产生与传播的过程中随时间而不断展宽.本文还基于工艺计算机辅助设计模拟软件(TCAD)进行器件模拟

提出了一种在130nm体硅工艺下

计算SET脉冲宽度的解析模型

并结合NBTI阈值电压退化的解析模型

建立了预测SET脉冲宽度在产生的过程中随PMOS器件的NBTI退化而不断展宽的解析模型

TCAD器件模拟的结果与解析模型的预测一致;本文还进一步建立了预测SET脉冲宽度在传播的过程中随PMOS器件的NBTI退化而不断展宽的解析模型

SPICE电路模拟的结果与解析模型所预测的结论一致.

Abstract

The effects of negative bias temperature instability (NBTI) on single event transient (SET) pulse are studied.The results show that:NBTI can result in SET pulse broadening in the production and propagation.An analytical model is developed to calculate SET pulse width in a 130nm CMOS process based on TCAD device simulations

combining with a reaction-diffusion (R-D) based NBTI degradation model

a novel analytical model to predict SET pulse broadening induced by NBTI is proposed

the results from TCAD simulations are in agreement with the ones predicted by this model;An analytical model to predict SET pulse broadening in the propagation is also proposed

SPICE simulations show consistent results with the ones predicted by the model.

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