Charging Characteristics of MOSFET Memory Based on Si Nanocrystals

SHI Yi; YUAN Xiao-li; WU Jun; YANG Hong-guan; GU Shu-lin; HAN Ping; ZHENG You-dou

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Charging Characteristics of MOSFET Memory Based on Si Nanocrystals

更新时间：2025-07-16

- Charging Characteristics of MOSFET Memory Based on Si Nanocrystals
- Acta Electronica Sinica Vol. 29, Issue 2, Pages: 145-147(2001)
- 作者机构：
  
  南京大学物理系和固体微结构国家重点实验室,南京,210093
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386.1
- Published：2001
- 稿件说明：
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SHI Yi, YUAN Xiao-li, WU Jun, et al. Charging Characteristics of MOSFET Memory Based on Si Nanocrystals[J]. Acta Electronica Sinica, 2001, 29(2): 145-147.
DOI：

SHI Yi, YUAN Xiao-li, WU Jun, et al. Charging Characteristics of MOSFET Memory Based on Si Nanocrystals[J]. Acta Electronica Sinica, 2001, 29(2): 145-147. DOI：

摘要

本文研究了硅纳米晶粒MOSFET存储器的荷电特征.器件阈值电压偏移达1.8V以上

并随着沟道宽度的变窄而增加

而与沟道长度基本无关.同时

阈值涨落也随宽度的变窄而增大.在20~300K测量温度范围内

器件阈值偏移和电荷的存储特性几乎不随温度变化

说明荷电过程主要由直接隧穿决定.进一步

在最窄沟道器件中观察到单电荷的荷电过程.

Abstract

The charging characteristics of the MOSFET memory based on Si nanocrystals with various channel dimensions are investigated in the temperature range of 20-300K.Large threshold voltage shifts up to 1.8V are obtained

being obviously dependent on the channel width

and independent of the channel length.It is experimentally found that the threshold voltage shift and charge retention characteristics are almost independent of temperature.Single electron/hole charge/discharge processes are observed in the device with the narrowest channel.

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