Circuit Simulation of MOSFET Memory Based on Composite Quantum Dots

LV Jin; SHI Yi; PU Lin; YANG Hong-guan; YANG Zheng; ZHENG You-dou

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Circuit Simulation of MOSFET Memory Based on Composite Quantum Dots

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- Circuit Simulation of MOSFET Memory Based on Composite Quantum Dots
- Acta Electronica Sinica Vol. 32, Issue 11, Pages: 1793-1795(2004)
- 作者机构：
  
  南京大学物理系和固体微结构物理国家重点实验室,江苏,南京,210093
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386.1
- Published：2004
- 稿件说明：
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LV Jin, SHI Yi, PU Lin, et al. Circuit Simulation of MOSFET Memory Based on Composite Quantum Dots[J]. Acta Electronica Sinica, 2004, 32(11): 1793-1795.
DOI：

LV Jin, SHI Yi, PU Lin, et al. Circuit Simulation of MOSFET Memory Based on Composite Quantum Dots[J]. Acta Electronica Sinica, 2004, 32(11): 1793-1795. DOI：

摘要

本文采用准经典近似的Monte Carlo方法对复合量子点MOSFET结构存储器的等效单电子电路进行了模拟.研究结果表明

由于台阶状的复合隧穿势垒的作用

存储器的存储时间特性可得到极大提高.我们进一步研究了N沟道锗/硅复合量子点MOSFET结构存储器的时间特性

得到其存储时间可长达数年

同时写擦时间可分别为μs和ns量级

从而这种新型的器件结构可以有效解决快速编程和长久存储间的矛盾.

Abstract

The time characteristics of the composite quantum dots based MOSFET memory is simulated with the Monte Carlo method in quasiclassical approximation.It indicates that the retention time could be improved evidently owing to the stepwise compound potential barrier.As an example

the time characteristics of

channel Ge/Si hetero-nanocrystal based MOSFET memory is investigated and the retention time could be as long as several years

at the same time

the writing and erasing time can be in the order of μs and ns

respectively.Hence the conflict between high-speed programming and long retention could be resolved satisfying.

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