Technology Investigation on SiO<sub>2</sub> Ion Barrier Film of Microchannel Plate

LI Ye; JIANG De-long; XIANG Rong; FU Shen-cheng; WU Kui; WANG Xin; WANG Guo-zheng; DUANMU Qing-duo; FU Li-chen; TIAN Jing-quan

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Technology Investigation on SiO₂ Ion Barrier Film of Microchannel Plate

更新时间：2025-07-16

- Technology Investigation on SiO₂ Ion Barrier Film of Microchannel Plate
- Acta Electronica Sinica Vol. 36, Issue 12, Pages: 2400-2404(2008)
- 作者机构：
  
  长春理工大学,吉林,长春,130022
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304
- Published：2008
- 稿件说明：
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LI Ye, JIANG De-long, XIANG Rong, et al. Technology Investigation on SiO₂ Ion Barrier Film of Microchannel Plate[J]. Acta Electronica Sinica, 2008, 36(12): 2400-2404.
DOI：

LI Ye, JIANG De-long, XIANG Rong, et al. Technology Investigation on SiO₂ Ion Barrier Film of Microchannel Plate[J]. Acta Electronica Sinica, 2008, 36(12): 2400-2404. DOI：

摘要

本文利用射频磁控溅射方法

在微通道板输入面上成功地制备出二氧化硅防离子反馈膜.通过对二氧化硅防离子反馈膜的电子透过特性测试

给出了特性曲线.利用蒙特卡罗模拟方法对二氧化硅和三氧化二铝两种防离子反馈膜的电子透过和离子阻止能力进行了分析和比较

得出了二氧化硅薄膜比三氧化二铝薄膜对电子的透过特性稍好

而后者比前者对离子的阻止能力较优越的结论.

Abstract

Silicon oxide ion barrier film was successfully fabricated on the input-face of microchannel plate by magnetron sputtering method.The electron transmission characteristics of silicon oxide ion barrier film were measured and the results were given.The electron-transmission and ion-stopping properties of two different ion barrier films (silicon oxide and aluminum oxide) were analyzed and compared by Monte Carlo simulation method.The electron-transmission property of silicon oxide thin film is better than that of aluminum oxide thin film and the ion-barrier films is inferior to that of aluminum oxide ion barrier film.

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Related Institution

Department of Physics,Yantai Normal University

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Technology Investigation on SiO2 Ion Barrier Film of Microchannel Plate

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Technology Investigation on SiO₂ Ion Barrier Film of Microchannel Plate