The electron scattering process of electron beam lithography in the thick resist was simulated by the Monte Carlo method with the optimized electron scattering model

the energy deposition density at the different depths of thick resist was calculated by using of the stratified method

and the three dimensional energy deposition model of the thick resist in the electron beam lithography was established. According to the three dimensional energy deposition mode

we have simulated the exposure of a three dimensional micro-structure of trapezoidal pyramid by the overlapped increment scanning strategy. Theoretical analysis and the simulation results show that the three dimensional energy deposition model based on the stratified method can realize the three dimensional simulation of the electron beam lithography more accurately.