Studying of Subpicosecond Transmission Characteristic of Semi-Insulting GaAs Photoconductive Switches

JIA Wan-li; SHI Wei; JI Wei-li; LI Meng-xia

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Studying of Subpicosecond Transmission Characteristic of Semi-Insulting GaAs Photoconductive Switches

更新时间：2025-07-16

- Studying of Subpicosecond Transmission Characteristic of Semi-Insulting GaAs Photoconductive Switches
- Acta Electronica Sinica Vol. 36, Issue 9, Pages: 1795-1799(2008)
- 作者机构：
  
  西安理工大学理学院,陕西,西安,710054
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN29
- Published Online：25 September 2008，
  
  Published：2008
- 稿件说明：
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JIA Wan-li, SHI Wei, JI Wei-li, et al. Studying of Subpicosecond Transmission Characteristic of Semi-Insulting GaAs Photoconductive Switches[J]. Acta Electronica Sinica, 2008, 36(9): 1795-1799.
DOI：

JIA Wan-li, SHI Wei, JI Wei-li, et al. Studying of Subpicosecond Transmission Characteristic of Semi-Insulting GaAs Photoconductive Switches[J]. Acta Electronica Sinica, 2008, 36(9): 1795-1799. DOI：

摘要

本文应用Ensemble-Monte Carlo方法模拟了半绝缘GaAs(SI-GaAs)光电导开关基于Auston等效电路亚皮秒传输特性.从载流子在开关体内的动态特性出发

研究了光电导开关在飞秒激光脉冲触发下光电导传输特性、电介质弛豫特性、开关储能特性以及开关工作模式;分析了非线性光电导开关对光能阈值和偏置电场阈值要求的物理机制.

Abstract

Ensemble Monte Carlo method is used to simulate the time-resolved transmission characteristic of Semi-Insulting GaAs (SI-GaAs) photoconductive switches based on "Auston" equivalent circuit model.According to the dynamic performance of photo-generated carriers in the semiconductor

we study the transmission characteristics

dielectric relaxation properties

energy storage specialty and work modes of photoconductive switches triggered by femto-second laser pulses and analyze the physical mechanism that the nonlinear photoconductive switches have the threshold of optical energy and electric bias field.

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西安理工大学应用物理系

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西安交通大学电气工程学院!西安

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西安理工大学应用物理系!西安

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