Efficient Extraction and Analysis of 3-D Interconnect Capacitance while Considering the Floating Dummies

ZHANG Meng-sheng; YU Wen-jian; WANG Ze-yi

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Efficient Extraction and Analysis of 3-D Interconnect Capacitance while Considering the Floating Dummies

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- Efficient Extraction and Analysis of 3-D Interconnect Capacitance while Considering the Floating Dummies
- Acta Electronica Sinica Vol. 33, Issue 4, Pages: 667-670(2005)
- 作者机构：
  
  清华大学计算机科学与技术系设计自动化实验室,北京,100084
- 作者简介：
- 基金信息：
- DOI：
  CLC： O241
- Published Online：25 April 2005，
  
  Published：2005
- 稿件说明：
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ZHANG Meng-sheng, YU Wen-jian, WANG Ze-yi. Efficient Extraction and Analysis of 3-D Interconnect Capacitance while Considering the Floating Dummies[J]. Acta Electronica Sinica, 2005, 33(4): 667-670.
DOI：

ZHANG Meng-sheng, YU Wen-jian, WANG Ze-yi. Efficient Extraction and Analysis of 3-D Interconnect Capacitance while Considering the Floating Dummies[J]. Acta Electronica Sinica, 2005, 33(4): 667-670. DOI：

摘要

向集成电路版图中填充金属哑元(dummy)可减少化学-机械抛光所产生的介质厚度差异

同时它也给传统的寄生电容提取工具带来性能上的巨大挑战.本文基于虚拟多介质加速的直接边界元法

提出一种有效处理含有哑元填充互连结构的三维电容提取算法.通过采用悬浮(floating)边界条件和有效的方程形成和求解方法

该算法在保持高精度的同时

速度比Raphael快几千倍、比文[5]中方法快十多倍.利用本文算法

还对含哑元结构进行了一系列试验

分析其对互连电容的影响

有助于集成电路的优化设计.

Abstract

The insertion of dummy metals is necessary to reduce the pattern-dependent variations of the dielectric thickness in the CMP process.This makes conventional tools of capacitance extraction exhibit prohibitive calculation time.This paper presents an efficient method for 3-D capacitance extraction with taking the floating dummies into account.Based on the QMM-accelerated BEM

our method inherits high computational speed while considering the floating conditions and using a new preconditioner.While preserving high accuracy

our method shows an excellent speed with 1000x speed-up over Raphael

about 10x speed-up over the method in Ref.[5].Finally

we carried out a series of experiments on cases which contain floating dummy-fills.The influence of dummy-filling on interconnect capacitance is analyzed and conclusions are drawn to benefit the design of high performance integrated circuits.

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Related Institution

Physics Department,Wuhan University

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Institute of Microelectronics and Information TechnologyWuhan UniversityWuhanHubei 430072China

清华大学计算机科学与技术系

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