Interference of Electron in GaAs/AlGaAs Multiquantum Well Structure

CHENG Xing-kui; HUANG Bo-biao; XU Xian-gang; REN Hong-wen; LIU Shi-wen; JIANG Min-hua

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Interference of Electron in GaAs/AlGaAs Multiquantum Well Structure

更新时间：2025-07-16

- Interference of Electron in GaAs/AlGaAs Multiquantum Well Structure
- Acta Electronica Sinica Vol. 29, Issue 5, Pages: 692-694(2001)
- 作者机构：
  
  1. 山东大学光电材料与器件研究所,济南,250100
  2. 山东大学晶体材料所,济南,250100
  3. 山东大学光电材料与器件研究所济南,250100
  4. 山东大学晶体材料所济南,250100
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN204
- Published Online：25 May 2001，
  
  Published：2001
- 稿件说明：
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CHENG Xing-kui, HUANG Bo-biao, XU Xian-gang, et al. Interference of Electron in GaAs/AlGaAs Multiquantum Well Structure[J]. Acta Electronica Sinica, 2001, 29(5): 692-694.
DOI：

CHENG Xing-kui, HUANG Bo-biao, XU Xian-gang, et al. Interference of Electron in GaAs/AlGaAs Multiquantum Well Structure[J]. Acta Electronica Sinica, 2001, 29(5): 692-694. DOI：

摘要

由电子波干涉的观点出发

理论分析指出:多量子阱结构势垒以上的电子存在一些分立的弱干涉非定域态.通过红外光激发

量子阱中基态电子可以跃迁到这些态上形成一些吸收峰.理论计算出的吸收峰位置与实验测量到的结果相当一致

并且理论估计的吸收峰强弱也与实验结果一致.

Abstract

On the basis of theory of electron interference

it is pointed out that there are a series of separate weak interference non-localized state above barrier for multiquantum well (MQW) structure.When photoexcitation occurs

the electrons on ground state in quantum well can be excited to the weak interference non-locaized state above barrier forming absorption peak.The calculated positions of absorption peak are in good agreement with experimental results and estimated strength of several absorption peaks is in agreement with experimental results.

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