Study on High Temperature Characteristics of Al0.3Ga0.22In0.48P/GaAsHBTerojunction Bipolar Transistors

WU Jie  1; XIA Guan  qun  1; SHU Wei  ming  1; GU Wei  dong  1; ZHANG Xing  hong  1; P.A.Houston  2

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Study on High Temperature Characteristics of Al_0.3Ga_0.22In_0.48P/GaAsHBTerojunction Bipolar Transistors

更新时间：2025-12-08

- Study on High Temperature Characteristics of Al_0.3Ga_0.22In_0.48P/GaAsHBTerojunction Bipolar Transistors
- Acta Electronica Sinica Issue 11, (1999)
- 作者机构：
  
  1. 中国科学院上海冶金研究所,上海,200050
  2. 英国Sheffield大学
  3. 中国科学院上海冶金研究所!上海200050英国Sheffield大学
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN322.8
- Published：1999
- 稿件说明：
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[1]吴杰,夏冠群,束伟民,顾伟东,张兴宏,P.A.Houston.Al_(0.3)Ga_(0.22)In_(0.48)P/GaAsHBT高温特性的研究[J].电子学报,1999(11):32-34+37.

WU Jie 1, XIA Guan qun 1, SHU Wei ming 1, et al. Study on High Temperature Characteristics of Al_0.3Ga_0.22In_0.48P/GaAsHBTerojunction Bipolar Transistors[J]. Acta Electronica Sinica, 1999, (11).
[1]吴杰,夏冠群,束伟民,顾伟东,张兴宏,P.A.Houston.Al_(0.3)Ga_(0.22)In_(0.48)P/GaAsHBT高温特性的研究[J].电子学报,1999(11):32-34+37. DOI：

WU Jie 1, XIA Guan qun 1, SHU Wei ming 1, et al. Study on High Temperature Characteristics of Al_0.3Ga_0.22In_0.48P/GaAsHBTerojunction Bipolar Transistors[J]. Acta Electronica Sinica, 1999, (11). DOI：

摘要

本文研制了Al03Ga022In048P/GaAs高温HBT器件

详细地研究了器件在300K～623K范围内HBT的直流电学特性.结果表明Al03Ga022In048P/GaAsHBT器件具有良好的高温特性

在300K～623K温度范围内

动态电流增益变化小于10%.Al03Ga022In048P/GaAsHBT可工作至623K

工作温度超过623K后

器件就不能正常工作

经分析发现导致HBT失效的直接原因是BC结短路.BC结短路的机制有待今后进一步探讨.

Abstract

High temperature Al 0 3 Ga 0 22 In 0 48 P/GaAs heterojunction bipolar transistors （HBTs） were fabricated

and their DC electric characteristics were studied in detail from 300K up to 623K.Experimental results show that Al 0 3 Ga 0 22 In 0 48 P/GaAs HBT possess excellent high temperature properties.Over the temperature range from 300K to 623K

current gain changes less than 10% from its average value.At ambient temperature higher than 623K

HBT failed.Analysis has shown that the short circuited BC junction is the direct cause of HTB’s failure.Further research works need to be done in order to fully understand BC junction’s failure mechanism.

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