Study and Fabrication of Channel  Base Transistor with Wider  Temperature Range,High  Frequency and High  Breakdown  Voltage

Cong Zhong; Wu Chunyu; Wang Rong; Shi Guangyuan; Yan Dongmei; Zhang Wen

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Study and Fabrication of Channel Base Transistor with Wider Temperature Range,High Frequency and High Breakdown Voltage

更新时间：2025-12-08

- Study and Fabrication of Channel Base Transistor with Wider Temperature Range,High Frequency and High Breakdown Voltage
- Acta Electronica Sinica Issue 5, (1999)
- 作者机构：
  
  1. 辽宁大学电子科学与工程系
  2. 成都星光电工厂
  3. 辽宁大学电子科学与工程系成都星光电工厂
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386.702
- Published：1999
- 稿件说明：
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[1]丛众,吴春瑜,王荣,石广元,闫东梅,张雯,朱肖林,汪永生.宽温高频高反压沟道基区晶体管研制[J].电子学报,1999(05):54-56.

Cong Zhong, Wu Chunyu, Wang Rong, et al. Study and Fabrication of Channel Base Transistor with Wider Temperature Range,High Frequency and High Breakdown Voltage[J]. Acta Electronica Sinica, 1999, (5).
[1]丛众,吴春瑜,王荣,石广元,闫东梅,张雯,朱肖林,汪永生.宽温高频高反压沟道基区晶体管研制[J].电子学报,1999(05):54-56. DOI：

Cong Zhong, Wu Chunyu, Wang Rong, et al. Study and Fabrication of Channel Base Transistor with Wider Temperature Range,High Frequency and High Breakdown Voltage[J]. Acta Electronica Sinica, 1999, (5). DOI：

摘要

耗尽基区双极晶体管也称为双极静电感应晶体管（ＢＳＩＴ），其电流放大系数（ｈＦＥ）具有负的温度系数．双极结型晶体管（ＢＪＴ）的ｈＦＥ具有正的温度系数．将ＢＳＩＴ与ＢＪＴ并联，采用ＢＪＴ常规平面工艺制造了宽温高频高反压沟道基区双极ＰＮＰ晶体管．本文描述了这种新器件结构、工作原理、设计与制造．新器件突出特点是：当温度变化较大时，ｈＦＥ漂移较小．测试结果表明：环境温度从２５℃升到１８０℃时，器件的ｈＦＥ随温度Ｔ的变化率小于３５％．优于同类型的常规双极结型晶体管，平均改善２０％．当温度从２５℃降到－５５℃，器件的ｈＦＥ变化率小于或等于３０％．

Abstract

Using the normal planar technology of bipolar junction transistor

we have fabricated the p n p high frequency

high breakdown voltage transistors which can operate in the wider temperature range from -55℃ to 180℃.In this paper we also describe the design

structure and fabrication of the new device with a smaller drift of h FE when temperature is changed.The tested results show that the changing rate of h FE of the new device is less than or equal to 35% when temperature is raised from 25℃ up to 180℃

which is 20% better than that of the normal bipolar transistor;whereas the changing rate of h FE is less than or equal to 30% when temperature is fallen from 25℃ down to -55℃.

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