Simulation Analysis of the Uniformity of Threshold Voltage in GaAs IC

Wu Jianping; Xia Guanqun; Zhao Jianlong; Liu Ruping

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Simulation Analysis of the Uniformity of Threshold Voltage in GaAs IC

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- Simulation Analysis of the Uniformity of Threshold Voltage in GaAs IC
- Acta Electronica Sinica Issue 5, (1999)
- 作者机构：
  
  中国科学院上海冶金研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN432.02
- Published：1999
- 稿件说明：
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[1]吴剑萍,夏冠群,赵建龙,刘汝萍.GaAs IC阈值电压均匀性的计算机模拟分析[J].电子学报,1999(05):63-66.

Wu Jianping, Xia Guanqun, Zhao Jianlong, et al. Simulation Analysis of the Uniformity of Threshold Voltage in GaAs IC[J]. Acta Electronica Sinica, 1999, (5).
[1]吴剑萍,夏冠群,赵建龙,刘汝萍.GaAs IC阈值电压均匀性的计算机模拟分析[J].电子学报,1999(05):63-66. DOI：

Wu Jianping, Xia Guanqun, Zhao Jianlong, et al. Simulation Analysis of the Uniformity of Threshold Voltage in GaAs IC[J]. Acta Electronica Sinica, 1999, (5). DOI：

摘要

本文在ＰＳＰＩＣＥ电路模拟的基础上设计了一套ＧａＡｓＩＣ对阈值电压均匀性要求的计算方法，并计算三种不同ＧａＡｓＩＣ对阈值对电压均匀性的要求，结果表明，ＳＤＦＬ对阈值电压均匀性的要求较低，σＶｔｈ为２１８ｍＶ，ＤＣＦＬ和ＢＤＣＦＬ对阈值电压均匀性要求较高，σＶｔｈ分别为３８ｍＶ和３５ｍＶ．模拟计算还提出：优化和未优化的电路对阈值电压均匀性的要求不同；工艺不同，电路对阈值电压均匀性的要求也不同．这些理论计算分析的结果对ＧａＡｓＩＣ的电路设计和工艺选择均有重要指导意义．

Abstract

A method to calculate the requirement of the uniformity of the threshold voltage in GaAs IC based on PSPICE simulation is presented and three different GaAs ICs are concerned.The result shows that SDFL has lower requirement of uniformity

σV th is 218mV while DCFL and BDCFL have higher requirements

σV th is 38mV and 35mV respectively.Also find that optimized and unoptimized circuits have different requirements

so do different processes.This conclusion is helpful to the circuit design and process choice.

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