A New Method for Judging Ohimc Contact Quality of Metal/Thin Semiconductor Layer

Hua Wenyu

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A New Method for Judging Ohimc Contact Quality of Metal/Thin Semiconductor Layer

更新时间：2025-12-08

- A New Method for Judging Ohimc Contact Quality of Metal/Thin Semiconductor Layer
- Acta Electronica Sinica Issue 8, (1999)
- 作者机构：
  
  1. 南京理工大学应用物理系
  2. 南京大学物理系
  3. 南京理工大学应用物理系南京大学物理系
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN306
- Published：1999
- 稿件说明：
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[1]华文玉,陈存礼.判断金属/薄层半导体欧姆接触质量的一个新方法[J].电子学报,1999(08):127-128.

Hua Wenyu. A New Method for Judging Ohimc Contact Quality of Metal/Thin Semiconductor Layer[J]. Acta Electronica Sinica, 1999, (8).
[1]华文玉,陈存礼.判断金属/薄层半导体欧姆接触质量的一个新方法[J].电子学报,1999(08):127-128. DOI：

Hua Wenyu. A New Method for Judging Ohimc Contact Quality of Metal/Thin Semiconductor Layer[J]. Acta Electronica Sinica, 1999, (8). DOI：

摘要

提出了一个判断金属／薄层半导体欧姆接触质量的新方法———环内圆形传输线模型外推法．样品制备简单，无需台面绝缘．测试局域在很小的圆环内无需考虑圆环外的任何边界影响．由于结构的对称性，消除了侧向电流聚集效应．通过测试值的直线拟合消除了部分偶然误差，提高了精度．

Abstract

A new method for judging ohmic contact quality of metal/thin semiconductor layer

circular transmission line model extrapolation method in the ring

is developed.The mesa isolation is omitted

thus simplifying sample preparation.Because all the measurements are located in the ring

there is no need to consider the effects of any boundary out side the ring.Lateral current crowding effect are completely eliminated because of the symmetrical construction of the disc and concentric ring.The straight line is fitted by measurement values

so a part of accidental error can be eliminated

and the accuracy is improved.

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