In the light of a modified two dimensonal Poisson equation

an analytical model for the threshold voltage of deep submicron MOSFETs is developed and

by introducting a continuous channel charge characteristics and properly including major small geometry and high field effects such as carrier velocity saturation

DIBL

field dependent mobility

inversion layer capactitance and channel length modulation etc.

an accurate

continuous and scaled down drain current model is obtained.The model’s output fits both the experimental data of Huajing’s sample and MINIMOS simulation well in all operation regions

and is avalable for VLSI simulation applications.