The Correlation Analysis and Modeling on Device Model Parameters

Hao Yue; Zhao Tianxu; Ma Peijun; Zhou Difei

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The Correlation Analysis and Modeling on Device Model Parameters

更新时间：2025-12-08

- The Correlation Analysis and Modeling on Device Model Parameters
- Acta Electronica Sinica Issue 8, (1999)
- 作者机构：
  
  西安电子科技大学微电子所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN402
- Published：1999
- 稿件说明：
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[1]郝跃,赵天绪,马佩军,周涤非.器件模型参数的相关性分析与建模[J].电子学报,1999(08):20-23.

Hao Yue, Zhao Tianxu, Ma Peijun, et al. The Correlation Analysis and Modeling on Device Model Parameters[J]. Acta Electronica Sinica, 1999, (8).
[1]郝跃,赵天绪,马佩军,周涤非.器件模型参数的相关性分析与建模[J].电子学报,1999(08):20-23. DOI：

Hao Yue, Zhao Tianxu, Ma Peijun, et al. The Correlation Analysis and Modeling on Device Model Parameters[J]. Acta Electronica Sinica, 1999, (8). DOI：

摘要

本文基于主成份分析和因子分析，提出了集成电路（ＩＣ）器件模型参数的主成份因子统计模型，并给出了主成份因子分析的方法及其模型的建立过程．最后，以电路实例分析验证了该方法的可行性和有效性．该统计模型可用于ＩＣ性能分析和统计优化设计．

Abstract

Based on the idea of principal component analysis and factor analysis

the principal component factor statistical model for IC device model parameters is presented

and the method of the principal component factor analysis and the procedure of the model established are given.At last

the feasibility and validity of the method by an example of circuit analysis is verfied.The statistic model is suited to statistical optimal design of IC.

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