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中科院西安光机所瞬态光学技术国家重点实验室
Published:1999
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[1]刘进元,山冰.半宽度为300ps超快高压电脉冲的产生与研究[J].电子学报,1999(08):134-135.
Liu Jinyuan, Shan Bing. 300ps Ultrafast High Voltage Electrical Pulse Generation[J]. Acta Electronica Sinica, 1999, (8).
本文介绍了一种高压、超快电脉冲的产生技术.该电路采用级联雪崩晶体管.电路用微波传输线结构.输出的电脉冲幅度为1~2kV、输出阻抗50Ω、脉冲前后沿小于300ps、脉冲半宽度为300ps,脉冲幅度和半宽度稳定性优于5%,该电路的触发晃动为±50ps,触发延时为8ns,输出脉冲工作频率小于1kHz.
The authors have developed an avalanche transistor based pulser.These transistors are mounted on microwave structure board.Thd output voltage ranges from 1~2kV into 50Ω load.The fall and rise time of this pulse is less than 300 picosecond.The pulse width is 300ps
trig jitter is ±50ps
trig delay is about 8ns.The repetition rate is less than 1kHz.
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