The Simulation of Kinetic Admittance for High Tc Superconducting Field Effect Transistor

Cai Qiyu; Jiang Jianfei; Shen Bo

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The Simulation of Kinetic Admittance for High Tc Superconducting Field Effect Transistor

更新时间：2025-12-08

- The Simulation of Kinetic Admittance for High Tc Superconducting Field Effect Transistor
- Acta Electronica Sinica Issue 5, (1999)
- 作者机构：
  
  上海交通大学微电子研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386.02
- Published：1999
- 稿件说明：
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[1]蔡琪玉,蒋建飞,沈波.高温超导场效应晶体管的动态导纳模拟[J].电子学报,1999(05):140-142.

Cai Qiyu, Jiang Jianfei, Shen Bo. The Simulation of Kinetic Admittance for High Tc Superconducting Field Effect Transistor[J]. Acta Electronica Sinica, 1999, (5).
[1]蔡琪玉,蒋建飞,沈波.高温超导场效应晶体管的动态导纳模拟[J].电子学报,1999(05):140-142. DOI：

Cai Qiyu, Jiang Jianfei, Shen Bo. The Simulation of Kinetic Admittance for High Tc Superconducting Field Effect Transistor[J]. Acta Electronica Sinica, 1999, (5). DOI：

摘要

本文基于我们建立的超导场效应器件的统一小信号理论，引进了动态导纳参数．对高温超导场效应晶体管的低频电流电压特性进行了数值模拟．分别对推广的二流体模型中正常电流和超导电流在一定的条件下随栅电压、漏电压、温度和频率的变化进行了分析．给出了一种高温超导场效应器件低频特性新的研究方法．

Abstract

A kinetic admittance parameter was introduced on the basis of our general small signal model of superconducting field effect devices.A numerical simulation of low frequency current voltage characteristic for the high Tc superconducting field effect transistor is conducted.Dependence of the normal current and supercurrent in the generalized two fluid model on gate voltage

drain voltage

temperature and frequency was analyzed.A new investigation method of low frequency characteristic of high Tc superconducting field effect devices was founded.

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