The Statistical Optimising Design of CMOS IC Parameter

Gan Xuewen; Feng Xiaomin; Xiao Zhiguang; Du Gang; Li Youbin

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The Statistical Optimising Design of CMOS IC Parameter

更新时间：2025-12-08

- The Statistical Optimising Design of CMOS IC Parameter
- Acta Electronica Sinica Issue 5, (1999)
- 作者机构：
  
  北京大学微电子学研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN432.02
- Published：1999
- 稿件说明：
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[1]甘学温,冯小敏,肖志广,杜刚,李佑斌.CMOS电路参数的统计优化设计[J].电子学报,1999(05):127-129.

Gan Xuewen, Feng Xiaomin, Xiao Zhiguang, et al. The Statistical Optimising Design of CMOS IC Parameter[J]. Acta Electronica Sinica, 1999, (5).
[1]甘学温,冯小敏,肖志广,杜刚,李佑斌.CMOS电路参数的统计优化设计[J].电子学报,1999(05):127-129. DOI：

Gan Xuewen, Feng Xiaomin, Xiao Zhiguang, et al. The Statistical Optimising Design of CMOS IC Parameter[J]. Acta Electronica Sinica, 1999, (5). DOI：

摘要

本文提出了一种用实验设计与模拟相结合对ＣＭＯＳ集成电路参数进行统计优化设计的方法，分析工艺因素设置及其起伏对电路参数的影响，建立起电路参数相对主要工艺因素变化的宏模型，并用模型公式找出使电路参数在预期值附近且偏差最小的优化工艺条件．

Abstract

A method to optimize CMOS IC parameters using experimental design combining simulations was presented.The effect of process factors′fluctuation on circuit parameters was analyzed and the macro model of circuit parameters was set up to model the relationship between circuit parameters and process factors.Using the model we can get the optimum process conditions which make the threshold voltage at the expected value and with the smallest deviation.

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