In very small MOSFET

distribution effects are strong due to high strength and large change of its electric field as well as its larger drain section.Therefore

distribution models are required to describe much accurately the gate currents.In this paper

the distribution models of electron and hole gate currents in NMOSFET are built by using of “lucky electron” concept and the two dimensional distribution models models of drain and substrate currents proposed by us.the distribution model of hole gate current is based on new process of hot hole injection in which holes are accelerated by the minus vertical electric field.The proposed distribution models can describe clearly injection processes of hot carriers

which is useful for the modeling of damage distrbution

damage growth and damage saturation of MOSFET’s hot carrier degradation.