Measurement of Radiation  Induced Interface Traps  Using the Subthreshold I-V Characteristic of MOSFET

张正选; 罗晋生; 袁仁峰; 何宝平; 姜景和; 罗尹虹

您当前的位置：

首页 >

文章列表页 >

Measurement of Radiation Induced Interface Traps Using the Subthreshold I-V Characteristic of MOSFET

更新时间：2025-12-08

- Measurement of Radiation Induced Interface Traps Using the Subthreshold I-V Characteristic of MOSFET
- Acta Electronica Sinica Issue 11, (1999)
- 作者机构：
  
  1. 西安交通大学微电子所!西安710049
  2. 西北核技术研究所,西安710024,西安交通大学微电子所!西安710049,西北核技术研究所!西安710024,西北核技术研究所!西安710024,西北核技术研究所!西安710024,西北核技术研究所!西安710024
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN407
- Published：1999
- 稿件说明：
移动端阅览
[1]张正选,罗晋生,袁仁峰,何宝平,姜景和,罗尹虹.利用MOSFET亚阈I-V特性进行辐射感生界面陷阱的测量[J].电子学报,1999(11):129-130+133.

张正选, 罗晋生, 袁仁峰, et al. Measurement of Radiation Induced Interface Traps Using the Subthreshold I-V Characteristic of MOSFET[J]. Acta Electronica Sinica, 1999, (11).
[1]张正选,罗晋生,袁仁峰,何宝平,姜景和,罗尹虹.利用MOSFET亚阈I-V特性进行辐射感生界面陷阱的测量[J].电子学报,1999(11):129-130+133. DOI：

张正选, 罗晋生, 袁仁峰, et al. Measurement of Radiation Induced Interface Traps Using the Subthreshold I-V Characteristic of MOSFET[J]. Acta Electronica Sinica, 1999, (11). DOI：

摘要

本文利用MOSFET亚阈IV曲线对加固和非加固MOSFET的辐射感生界面陷阱密度进行了测量.分析和讨论了辐射感生的界面陷阱密度依赖于辐射总剂量和辐射剂量率的变化关系

Abstract

This article studies the measurement of radiation induced interface traps using the subthreshold I V characteristic of MOSFET.The radiation induced interface traps which were related to total dose and dose rate were analyzed and discussed.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

A Novel Method for Calculating the Radiation and Scattering Patterns of Large Finite Arrays Including Mutual Coupling Effects

Study on Extraction of Stress-Induced Interface Traps in MOSFETs by Linear Cofactor Differernce Subthreshold Voltage Peak Technique

Hot Carrier-Induced Interface Traps in N-Channel MOSFET/SOI Characterized by a Forward Gated-Diode Technique

Radiation and Mutual Impedance of Linear Antennas in a Circular Waveguide

Related Author

ZHANG Shuai

GONG Shu-xi

JIANG Wen

HE Jin

ZHANG Xing

HUANG Ru

WANG Yang-yuan

HE Jin

Related Institution

National Key Laboratory of Antennas and Microwave Technology, Xidian University

Institution of Microelectronics,Peking University

Department of Electrical Engineering and Computer Science,University of California at Berkeley

Institution of MicroelectronicsPeking UniversityBeijing 100871China

Department of Electrical Engineering and Computer ScienceUniversity of California at BerkeleyCA

⁰