A GaAs MMIC Realization of Large Tuning-Range Voltage-controlled Active Bandpass Filter Using Negative Resistance Circuit

田彤; 罗晋生; 张瑞智; 李祖华; 陈堂胜; 林金庭

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A GaAs MMIC Realization of Large Tuning-Range Voltage-controlled Active Bandpass Filter Using Negative Resistance Circuit

更新时间：2025-12-08

- A GaAs MMIC Realization of Large Tuning-Range Voltage-controlled Active Bandpass Filter Using Negative Resistance Circuit
- Acta Electronica Sinica Issue 11, Pages: 107-109(1998)
- 作者机构：
  
  1.   西安交通大学微电子所!西安
  2.   710049
  3.   电子部南京55所!南京
  4.   210016
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN713
- Published：1998
- 稿件说明：
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[1]田彤,罗晋生,张瑞智,李祖华,陈堂胜,林金庭.采用负阻电路的大调频范围GaAsMMIC压控带通有源滤波器[J].电子学报,1998(11):107-109.

田彤, 罗晋生, 张瑞智, et al. A GaAs MMIC Realization of Large Tuning-Range Voltage-controlled Active Bandpass Filter Using Negative Resistance Circuit[J]. Acta Electronica Sinica, 1998, (11): 107-109.
[1]田彤,罗晋生,张瑞智,李祖华,陈堂胜,林金庭.采用负阻电路的大调频范围GaAsMMIC压控带通有源滤波器[J].电子学报,1998(11):107-109. DOI：

田彤, 罗晋生, 张瑞智, et al. A GaAs MMIC Realization of Large Tuning-Range Voltage-controlled Active Bandpass Filter Using Negative Resistance Circuit[J]. Acta Electronica Sinica, 1998, (11): 107-109. DOI：

摘要

采用负阻电路以及我们自行构造的模型设计的集成化平面肖特基变容管，用GaAsMMIC技术实现了L波段大调频范围压控带通滤波器该滤波器具有200MHk的3dB带宽，调频范围1．64GHz～1．0GHz、计约600MHz并具有足够的带外抑制比．全部偏置电路均在片上，芯片共占面积1．6×1．8mm2．

Abstract

A second order large tuning-range bandpass active filter has been developed with GaAs MMIC technique using negative resistance circuits and integrated planar Schottky diodes designed by ourselves. The filter has a 200MHz 3 dB-bandwidth and a 600MHz tuning-range of centre freqency

from 1. 6GHz to 1GHz

and occupies an area of 1. 6 ×1. 8mm2 on the wafer including all biasing elements.

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