The Measurement of S  parameter of a Microwave Monolithic  Integrated Circuit by ps Photoconductive Sampling Technique

Lu Fuyun; Yuan Shuzhong; Pan Jiaqi; Gai Qi; Zhao Yuanchao; He Qingguo

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The Measurement of S parameter of a Microwave Monolithic Integrated Circuit by ps Photoconductive Sampling Technique

更新时间：2025-12-08

- The Measurement of S parameter of a Microwave Monolithic Integrated Circuit by ps Photoconductive Sampling Technique
- Acta Electronica Sinica Issue 2, (1999)
- 作者机构：
  
  1. 南开大学物理系
  2. 国家教委光学信息技术开放实验室
  3. 南开大学物理系国家教委光学信息技术开放实验室
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN29
- Published：1999
- 稿件说明：
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[1]吕福云,袁树忠,潘家齐,盖琦,赵源超,何庆国.用ps光电导采样技术测量微波单片集成电路的S参数[J].电子学报,1999(02):27-29.

Lu Fuyun, Yuan Shuzhong, Pan Jiaqi, et al. The Measurement of S parameter of a Microwave Monolithic Integrated Circuit by ps Photoconductive Sampling Technique[J]. Acta Electronica Sinica, 1999, (2).
[1]吕福云,袁树忠,潘家齐,盖琦,赵源超,何庆国.用ps光电导采样技术测量微波单片集成电路的S参数[J].电子学报,1999(02):27-29. DOI：

Lu Fuyun, Yuan Shuzhong, Pan Jiaqi, et al. The Measurement of S parameter of a Microwave Monolithic Integrated Circuit by ps Photoconductive Sampling Technique[J]. Acta Electronica Sinica, 1999, (2). DOI：

摘要

本文报道用光电导采样技术测量微波单片集成电路的Ｓ参数的基本原理．首次用光电导采样技术测量了宽带（１８～３６ＧＨｚ）低噪声三级放大器的Ｓ参数，与用网络分析仪测量的结果进行了比较，一致性很好．而光电导采样技术的测量带宽已达到１００ＧＨｚ．

Abstract

The fundamental principle to measure S parameter of microwave monolithic integrated circuit by using ps photoconductive sampling technique has been reported.The S parameter of a wide band （18～36GHz）low noise three stage amplifier has been measured using this method.The results agree well with those measured by using network analyzer

but 100GHz band width has been achieved by ps photoconductive sampling technique.

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