Desing and Experimental of Ku Band PHEMT Monolithic Low-Noise Amplifier

陈效建; 乔宝文; 戚友芹; 郝西萍; 刘军; 王军贤

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Desing and Experimental of Ku Band PHEMT Monolithic Low-Noise Amplifier

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- Desing and Experimental of Ku Band PHEMT Monolithic Low-Noise Amplifier
- Acta Electronica Sinica Issue 11, Pages: 33-36(1998)
- 作者机构：
  
  1. 南京电子器件研究所!南京
  2. 210016
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN722
- Published：1998
- 稿件说明：
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[1]陈效建,乔宝文,戚友芹,郝西萍,刘军,王军贤.Ku波段PHEMT单片低噪声放大器的设计与实验[J].电子学报,1998(11):33-36.

陈效建, 乔宝文, 戚友芹, et al. Desing and Experimental of Ku Band PHEMT Monolithic Low-Noise Amplifier[J]. Acta Electronica Sinica, 1998, (11): 33-36.
[1]陈效建,乔宝文,戚友芹,郝西萍,刘军,王军贤.Ku波段PHEMT单片低噪声放大器的设计与实验[J].电子学报,1998(11):33-36. DOI：

陈效建, 乔宝文, 戚友芹, et al. Desing and Experimental of Ku Band PHEMT Monolithic Low-Noise Amplifier[J]. Acta Electronica Sinica, 1998, (11): 33-36. DOI：

摘要

通过分析微波单片集成电路（MMIC）与常用的微波立体电路的不同点，讨论了采用通用的微波电路软件进行MMIC精确设计的有效途径．着重分析了在软件中如何建立三类MMIC用元件（有源器件、无源元件及由MMIC工艺决定的特有图形元件）电路模型的方法借助这一分析，使用通用的微波电路软件，完成了Ku波段两级AlGaAs／InGaAsPHEMT单片低噪声放大器的设计与研制，取得了与CAD设计值十分相近的实验结果：在13．4～14．0GHz的频率范围内，噪声系数（NF）1．66±0．04dB，相关增益（Ga）13．3±0．05dB，为国内目前的最好结果

Abstract

From analyzing the difference between MMIC and conventional microwave ciruit

theMMIC precision design method based on using commercial microwave circuit CAD software has been discussed. The emphasis is placed on modeling three kinds of MMIC elements （active devices

passive elements

and unique pattern elements determined by MMIC process） in the software. Relying on thismethod

the design and development of a Ku-band two-stage AlGaAs/InGaAs PHEMT MMIC LNA areperformed by using the conventional microwave circuit design program. The amplifier has the performance:NF of 1.66 ± 0 .04 dB with Ga of 13 .3 ±0 .05 dB at 13 .4 to 14 .0 GHZ

which is in well agreement with the CAD data and is the best result in China so far.

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