CAD Optimization and Experimental Result of Hetero-Layer-Structure for Ka-Band AlGaAs／InGaAs Low Noise PHEMTs

陈效建

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CAD Optimization and Experimental Result of Hetero-Layer-Structure for Ka-Band AlGaAs／InGaAs Low Noise PHEMTs

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- CAD Optimization and Experimental Result of Hetero-Layer-Structure for Ka-Band AlGaAs／InGaAs Low Noise PHEMTs
- Acta Electronica Sinica Issue 11, Pages: 120-123(1998)
- 作者机构：
  
  1. 南京电子器件研究所!南京
  2. 210016
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN015
- Published：1998
- 稿件说明：
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[1]陈效建.Ka波段AlGaAs/InGaAs低噪声PHEMT异质材料结构的计算机优化与实验结果[J].电子学报,1998(11):120-123.

陈效建. CAD Optimization and Experimental Result of Hetero-Layer-Structure for Ka-Band AlGaAs／InGaAs Low Noise PHEMTs[J]. Acta Electronica Sinica, 1998, (11): 120-123.
[1]陈效建.Ka波段AlGaAs/InGaAs低噪声PHEMT异质材料结构的计算机优化与实验结果[J].电子学报,1998(11):120-123. DOI：

陈效建. CAD Optimization and Experimental Result of Hetero-Layer-Structure for Ka-Band AlGaAs／InGaAs Low Noise PHEMTs[J]. Acta Electronica Sinica, 1998, (11): 120-123. DOI：

摘要

讨论了毫米波低噪声PHEMT的设计要点藉助Schroedinger／Poisson方程及器件方程，进行了Ka波段AlGaAs／InGaAs低噪声PHEMT用异质层结构的数值计算及CAD优化．确定出分子束外延MBE时诸层的最佳组分。浓度与厚度上述优化分析的结果用于器件的实验研制，取得了34．4Gfu下噪声系数（NF）1．92dB、相关增益Ga6．5dB的国内最好结果

Abstract

The design keys for mm-wave low-noise PHEMT have been discussed in detail. By use of Schroedinger-/Poisson equation and the well-known device equations

numerical calculation and CAD optimization for the hetero-layer-structure parameters of the device have been completed. Therefore

theoptimized composition

doping level and thickness of the hetero-layers have been determined. Based on the analysis

the developed device has the performance: NF of 1. 92 dB with Ga of 6. sclB at 34z.4Gfu

which is the best result so far in China.

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