The challenges in further development of Si microelectronics

especially MOSFET’s into foe sub 0. 1μm regime in light of fundamental physical effects and practical consideration are discussed.The key issues of physical limitations in Si microelectronics includes: fundamental physical limitations

material limitations

technology limitalions

devices limitations

circuits and system limitations. Several potential alternative devices thai may takes us to the outermost limit-ations of Si MOSFET’s scaling down

such as single electron devices are introduced.