Macro Model of an External  Cavity Semiconductor Laser

Nian Hua

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Macro Model of an External Cavity Semiconductor Laser

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- Macro Model of an External Cavity Semiconductor Laser
- Acta Electronica Sinica Issue 2, (1999)
- 作者机构：
  
  1. 郑州大学电子工程系
  2. 天津大学电子与信息工程学院
  3. 郑州大学电子工程系天津大学电子与信息工程学院
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN248.401
- Published：1999
- 稿件说明：
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[1]粘华,毛陆虹.外腔半导体激光器的宏模型[J].电子学报,1999(02):136-137.

Nian Hua. Macro Model of an External Cavity Semiconductor Laser[J]. Acta Electronica Sinica, 1999, (2).
[1]粘华,毛陆虹.外腔半导体激光器的宏模型[J].电子学报,1999(02):136-137. DOI：

Nian Hua. Macro Model of an External Cavity Semiconductor Laser[J]. Acta Electronica Sinica, 1999, (2). DOI：

摘要

本文给出了外腔半导体激光器（ＥＣＬＤ）大信号宏模型．该模型可以作为光电集成ＥＣＬＤ的计算机辅助设计模型，亦可作为考察光反馈对单模ＬＤ影响的分析模型．模型可以用通用电路分析软件进行分析，分析结果与已报导的理论和实验基本一致．

Abstract

A macro model of an external cavity semiconductor laser（ECLD） is presented in this paper.The model can be used as an optic electronics integrated ECLD model for computer aided design and as an analytic model for observing light feedback effects on a single longitudinal mode LD.The model permits the analysis of characteristics of an ECLD using general circuit analysis software and the analysis results are in basic agreement with reported theoretical and experimental data.

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