Theoretical Analysis and  Optimum Design for InGaAs（P）Strained Multiple－Quantum－Well Lasers

彭宇恒; 王玮; 陈维友; 刘式墉

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Theoretical Analysis and Optimum Design for InGaAs（P）Strained Multiple－Quantum－Well Lasers

更新时间：2025-12-08

- Theoretical Analysis and Optimum Design for InGaAs（P）Strained Multiple－Quantum－Well Lasers
- Acta Electronica Sinica Issue 11, (1997)
- 作者机构：
  
  1.   吉林大学电子工程系
  2.   集成光电子学国家重点联合实验室
  3.   吉林工学院
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN248
- Published：1997
- 稿件说明：
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[1]彭宇恒,王玮,陈维友,刘式墉.InGaAs（P）应变多量子阱激光器的理论分析与优化设计[J].电子学报,1997(11):32-35.

彭宇恒, 王玮, 陈维友, et al. Theoretical Analysis and Optimum Design for InGaAs（P）Strained Multiple－Quantum－Well Lasers[J]. Acta Electronica Sinica, 1997, (11).
[1]彭宇恒,王玮,陈维友,刘式墉.InGaAs（P）应变多量子阱激光器的理论分析与优化设计[J].电子学报,1997(11):32-35. DOI：

彭宇恒, 王玮, 陈维友, et al. Theoretical Analysis and Optimum Design for InGaAs（P）Strained Multiple－Quantum－Well Lasers[J]. Acta Electronica Sinica, 1997, (11). DOI：

摘要

本文从理论上分析计算并给出了ＩｎＧａＡｓ（Ｐ）应变多量子阱激光器的优化设计参数．考虑到多量子阱阱区的注入不均匀性，提出了一种新的分析和计算方法．对于激射波长为１．５５微米的１．５％压缩应变多量子阱激光器，最佳的阱数为四个，最佳腔长为５００微米左右．

Abstract

The optimum design parameters of InGaAs（P）strained multiple-quantum-well lasers are presented .Taking the non-homogeneity of injection carriers and optical field into account

a new method of analysis and calculation is also provided.In the case of 1 .5% compressively strained lasers

the optimum number of wells is four

and the optimum lasers’ cavity length is about 500 micrometers.

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