Electrical Transporting Properties of Hydrogenated Nanocrystalline Silicon DiodeS

刘明; 余明斌; 何宇亮; 江兴流

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Electrical Transporting Properties of Hydrogenated Nanocrystalline Silicon DiodeS

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- Electrical Transporting Properties of Hydrogenated Nanocrystalline Silicon DiodeS
- Acta Electronica Sinica Issue 11, (1997)
- 作者机构：
  
  北京航空航天大学非晶态物理研究室
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN11+1
- Published：1997
- 稿件说明：
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[1]刘明,余明斌,何宇亮,江兴流.纳米硅二极管的电输运特性[J].电子学报,1997(11):72-74.

刘明, 余明斌, 何宇亮, et al. Electrical Transporting Properties of Hydrogenated Nanocrystalline Silicon DiodeS[J]. Acta Electronica Sinica, 1997, (11).
[1]刘明,余明斌,何宇亮,江兴流.纳米硅二极管的电输运特性[J].电子学报,1997(11):72-74. DOI：

刘明, 余明斌, 何宇亮, et al. Electrical Transporting Properties of Hydrogenated Nanocrystalline Silicon DiodeS[J]. Acta Electronica Sinica, 1997, (11). DOI：

摘要

用ＰＥＣＶＤ法在Ｓｉ衬底上沉积了纳米硅（ｎｃ－Ｓｉ：Ｈ）薄膜，其室温暗电导可达１０－３～１０－１Ω－１ｃｍ－１，高于本征单晶硅的电导，将其制成遂道二极管，其Ｉ－Ｖ曲线在７７Ｋ呈现出量子台阶，对这一新颖物理现象进行了定性解释．

Abstract

The hydrogenated nanocrystalline silcon films （nc-Si:H） are deposited on silicon substrate byplasma enhanced chemical vapour deposition（PECVD） .The room temperature dark conductivity σof nc-Si: H is in the range of 10-3 -10-1Ω-cm1

higher than that of intrinsic silicon. Diodes consisting of nc-Si: H film are fabricated and their I-V curves show some quantum staircase below 77K. This novel physical features are explained qualitatively.

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The School of Electronic and Information Engineering,Xianning University

The School of Electronic and Information EngineeringXianning UniversityXianningHubei 437005China

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