The Absorption Cells Used in the Frequency Stabilization of InGaAsP and GaAlAs Semiconductor Lasers

王瑞峰; 蔡伯荣; 洪永和; 胡渝; 任文华

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The Absorption Cells Used in the Frequency Stabilization of InGaAsP and GaAlAs Semiconductor Lasers

更新时间：2025-12-08

- The Absorption Cells Used in the Frequency Stabilization of InGaAsP and GaAlAs Semiconductor Lasers
- Acta Electronica Sinica Issue 11, (1997)
- 作者机构：
  
  电子科技大学光电子技术系
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN248
- Published：1997
- 稿件说明：
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[1]王瑞峰,蔡伯荣,洪永和,胡渝,任文华.InGaAsP和GaAlAs半导体激光器稳频放电吸收池的研究[J].电子学报,1997(11):69-71.

王瑞峰, 蔡伯荣, 洪永和, et al. The Absorption Cells Used in the Frequency Stabilization of InGaAsP and GaAlAs Semiconductor Lasers[J]. Acta Electronica Sinica, 1997, (11).
[1]王瑞峰,蔡伯荣,洪永和,胡渝,任文华.InGaAsP和GaAlAs半导体激光器稳频放电吸收池的研究[J].电子学报,1997(11):69-71. DOI：

王瑞峰, 蔡伯荣, 洪永和, et al. The Absorption Cells Used in the Frequency Stabilization of InGaAsP and GaAlAs Semiconductor Lasers[J]. Acta Electronica Sinica, 1997, (11). DOI：

摘要

本文报导了我们采用＂光电流＂信号作为频率标准，稳定ＩｎＧａＡｓＰ和ＧａＡｌＡｓ半导体激光器输出光波频率所用的气体放电吸收池的设计与研制结果．

Abstract

We used the optogalvanic signal of a gas absorbtion cell as a frequency Standard to stabilize the frequency of InGaAsP and GaAlAs semiconductor lasers. We reprot mainly the results of the design and development on the absoption cells used.

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