Characteristics of the Thermistor Made of B-doped Diamond Films

贾宇明; 杨邦朝

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Characteristics of the Thermistor Made of B-doped Diamond Films

更新时间：2025-12-08

- Characteristics of the Thermistor Made of B-doped Diamond Films
- Acta Electronica Sinica Issue 5, Pages: 122-124(1998)
- 作者机构：
  
  1. 成都电子科技大学信息材料工程学院!成都
  2. 610054
- 作者简介：
- 基金信息：
- DOI：
  CLC： TM54
- Published：1998
- 稿件说明：
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[1]贾宇明,杨邦朝.掺硼金刚石薄膜热敏电阻器性能[J].电子学报,1998(05):122-124.

贾宇明, 杨邦朝. Characteristics of the Thermistor Made of B-doped Diamond Films[J]. Acta Electronica Sinica, 1998, (5): 122-124.
[1]贾宇明,杨邦朝.掺硼金刚石薄膜热敏电阻器性能[J].电子学报,1998(05):122-124. DOI：

贾宇明, 杨邦朝. Characteristics of the Thermistor Made of B-doped Diamond Films[J]. Acta Electronica Sinica, 1998, (5): 122-124. DOI：

摘要

用微波等离子体CVD方法制作了掺硼金刚石薄膜热敏电阻器．该器件的结构由Si3N4基底和2μm厚的掺硼金刚石薄膜组成，并采用了经退火处理的钛／金双金属层制作欧姆接触．结果在室到600℃范围内获得了欧姆接触、温度响应以及电阻温度系数优良的热敏电阻器．

Abstract

Thermistors have been fabricated from B-doped polycrystalline films by microwave plasma CVD method. The device structure consisted of 2μm thick of boron doped diamond films on a Si3N4 substrate.Ohmic contacts were established with an annealed titanium/gold bilayer structure. As a result

the thermistors with good ohmic contact

liner temperature response and high TCR （temperature coefficient of resistance） from room temperature to 600℃ have been obtained.

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