Analytical Models to Describe Kink Effect and Low Frequency Dispersion Effect in HEMTs

张义门; 吴拥军; 张玉明

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Analytical Models to Describe Kink Effect and Low Frequency Dispersion Effect in HEMTs

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- Analytical Models to Describe Kink Effect and Low Frequency Dispersion Effect in HEMTs
- Acta Electronica Sinica Issue 11, (1997)
- 作者机构：
  
  1. 西安电子科技大学微电子研究所
  2. 北京大学
  3. 西安交通大学
  4. 西安电子科技大学微电子研究所北京大学西安交通大学
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN32
- Published：1997
- 稿件说明：
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[1]张义门,吴拥军,张玉明.HEMT的Kink效应和低频偏移效应解析模型[J].电子学报,1997(11):14-17.

张义门, 吴拥军, 张玉明. Analytical Models to Describe Kink Effect and Low Frequency Dispersion Effect in HEMTs[J]. Acta Electronica Sinica, 1997, (11).
[1]张义门,吴拥军,张玉明.HEMT的Kink效应和低频偏移效应解析模型[J].电子学报,1997(11):14-17. DOI：

张义门, 吴拥军, 张玉明. Analytical Models to Describe Kink Effect and Low Frequency Dispersion Effect in HEMTs[J]. Acta Electronica Sinica, 1997, (11). DOI：

摘要

本文在考虑到界面态陷阱的基础上，建立了ＨＥＭＴ的静态和交流小信号解析模型，该模型能够正确地描述ＨＥＭＴ的Ｋｉｎｋ效应和低频偏移效应，并和实验符合相当好．文中还深入讨论了Ｉｎ组分和偏置的影响．

Abstract

Static and AC small signal analytical models to describe correctly Kink effect and low frequency dispersion effect in HEMTs are established in this paper considering interface traps

also the effects of in contents and bias are studied theoretically. The theory in this paper matches the experiment dais very well.

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