Design and Performance of Deep－Submicron MOSFET’s with δ－Shaped Channel Doping Profiles

刘卫东; 李志坚; 刘理天; 余志平

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Design and Performance of Deep－Submicron MOSFET’s with δ－Shaped Channel Doping Profiles

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- Design and Performance of Deep－Submicron MOSFET’s with δ－Shaped Channel Doping Profiles
- Acta Electronica Sinica Issue 5, (1997)
- 作者机构：
  
  1. 清华大学微电子学研究所
  2. 美国斯坦福大学集成系统中心
  3. 清华大学微电子学研究所美国斯坦福大学集成系统中心
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386.1
- Published：1997
- 稿件说明：
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[1]刘卫东,李志坚,刘理天,余志平.深亚微米沟道δ掺杂NMOSFET结构特性和设计[J].电子学报,1997(05):21-24.

刘卫东, 李志坚, 刘理天, et al. Design and Performance of Deep－Submicron MOSFET’s with δ－Shaped Channel Doping Profiles[J]. Acta Electronica Sinica, 1997, (5).
[1]刘卫东,李志坚,刘理天,余志平.深亚微米沟道δ掺杂NMOSFET结构特性和设计[J].电子学报,1997(05):21-24. DOI：

刘卫东, 李志坚, 刘理天, et al. Design and Performance of Deep－Submicron MOSFET’s with δ－Shaped Channel Doping Profiles[J]. Acta Electronica Sinica, 1997, (5). DOI：

摘要

利用能量输运模型（ＥＴＭ）系统研究了沟道δ掺杂分布对深亚微米ＭＯＳＦＥＴ结构特性的影响；发现δ掺杂结构不仅能够有效地抑制短沟道效应，而且可以获得较高的驱动速度，改善了掺杂容限特性；只要δ掺杂峰值浓度离界面保持一定距离，则热电子产生率无明显增长；提出的δ掺杂分布适用于０．１μｍＭＯＳＦＥＴ，与均匀掺杂相比，它具有较高的综合品质因子．

Abstract

Based on the energy transport model （ETM）

the influence of δ-shaped dopingprofiles on deep-submicron MOSFET performance is systematically investigated. It is discoveredthat δ-shaped doping configuration can not only effectively suppress short-channel effects

but alsocan provide high driving capability with improved doping fluctuation tolerances. Simulationsdemonstrate that the incorporation of δ-shaped doping will not result in noticeable increase in thehot-electron generation rate as long as the peak doping is placed for a desired distance away the Si/SiO2 interface. The proposed δ doping profile for 0. lμm MOSFET’s exhibits even higher figure ofmerits than the uniform substrate doping.

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