The Total Dose Radiation Characteristics of Short Channel CMOS/SIMOX Devices

张兴; 王阳元

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The Total Dose Radiation Characteristics of Short Channel CMOS/SIMOX Devices

更新时间：2025-12-08

- The Total Dose Radiation Characteristics of Short Channel CMOS/SIMOX Devices
- Acta Electronica Sinica Issue 11, (1996)
- 作者机构：
  
  北京大学微电子学研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386
- Published：1996
- 稿件说明：
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[1]张兴,王阳元.短沟道CMOS／SIMOX器件及电路的辐照特性研究[J].电子学报,1996(11):30-32+47.

张兴, 王阳元. The Total Dose Radiation Characteristics of Short Channel CMOS/SIMOX Devices[J]. Acta Electronica Sinica, 1996, (11).
[1]张兴,王阳元.短沟道CMOS／SIMOX器件及电路的辐照特性研究[J].电子学报,1996(11):30-32+47. DOI：

张兴, 王阳元. The Total Dose Radiation Characteristics of Short Channel CMOS/SIMOX Devices[J]. Acta Electronica Sinica, 1996, (11). DOI：

摘要

利用薄膜全耗尽ＣＭＯＳ／ＳＯＩ工艺成功地研制了沟道长度为１．０μｍ的薄膜抗辐照ＳＩＭＯＸＭＯＳＦＥＴ、ＣＭＯＳ／ＳＩＭＯＸ反相器和环振电路，Ｎ和ＰＭＯＳＦＥＴ在辐照剂量分别为３ｘ１０５ｒａｄ（Ｓｉ）和７ｘ１０５ｒａｄ（Ｓｉ）时的阈值电压漂移均小于１Ｖ，１９级ＣＭＯＳ／ＳＩＭＯＸ环振经过５ｘ１０５ｒａｄ（Ｓｉ）剂量的电离辐照后仍能正常工作，其门延迟时间由辐照前的２３７ｐｓ变为３２８ｐｓ。

Abstract

This paper discusses the total dose radiation characteristics of 1.0μm SIMOX MOSFETs

CMOS/SIMOX inverters and ring oscillators.The thin film SIMOX MOSFETs have a good radiation characteristics.The radiation induced threshold voltage shifts are less than 1.0V when the irradiation dose is 3x105rad（Si） and 7x105rad（Si） for N-and P-MOSFET

respectively.The ring oscillator can operate well after irradiation of 5x105rad（Si） γ ray.Its propagation delay increases from 237ps to 328ps.The radiation tolerance of PMOSFET is better than that of NMOSFET.The radiation induced leakage of NMOSFET is mainly caused by the parasitic backchannel transistor.

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