Defect Size Distributions with Fractal Feature and Dynamical Model

Hao Yue

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Defect Size Distributions with Fractal Feature and Dynamical Model

更新时间：2025-12-08

- Defect Size Distributions with Fractal Feature and Dynamical Model
- Acta Electronica Sinica Issue 2, (1997)
- 作者机构：
  
  1. 西安电子科技大学微电子所
  2. 浙江大学微电子研究所
  3. 西安电子科技大学微电子所浙江大学微电子研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN305
- Published：1997
- 稿件说明：
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[1]郝跃,朱春翔.硅片缺陷粒径分布的分形特征及动力学模型[J].电子学报,1997(02):73-75.

Hao Yue. Defect Size Distributions with Fractal Feature and Dynamical Model[J]. Acta Electronica Sinica, 1997, (2).
[1]郝跃,朱春翔.硅片缺陷粒径分布的分形特征及动力学模型[J].电子学报,1997(02):73-75. DOI：

Hao Yue. Defect Size Distributions with Fractal Feature and Dynamical Model[J]. Acta Electronica Sinica, 1997, (2). DOI：

摘要

本文研究硅片上与光刻工艺相关的尘粒（缺陷）的粒径分布，分析缺陷粒径分布的分形特征，利用缺陷粒径的分布函数得到缺陷粒径体系的分维数，建立缺陷粒径分布的分形模型，同时给出此模型所得参数的物理意义．最后，本文对缺陷粒径变化过程给出了新的动力学模型，并对此进行分析和讨论．揭示光刻缺陷的粒径分布及其动力学成因，为集成电路可制造性设计及功能成品率的精细表征开辟了一条新径．

Abstract

Based on the defect size distributions on the silicon wafer

the fractal feature of the point defect distribution is analysed and the fractal model of describing the defect size distribu-nons is obtained by means of the system of the fractional dimension. This model has physical meaning clearly. A new dynamical model of expressing the change of defect size is given and discussed. The model can obtain defect characteristics which are necessary for accurate functional yield prediction during design for manufacturability of IC’s.

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Related Institution

Microelectronics Inst.of Xidian Univ.

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浙江大学ＣＡＤ＆ＧＣ实验室

西安电子科技大学微电子所浙江大学ＣＡＤ＆ＧＣ实验室

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