Heterojunction Barrier Effects in Si/SiGe/Si Double Heteroiunction Bipolar Transistor

张万荣; 曾峥; 罗晋生

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Heterojunction Barrier Effects in Si/SiGe/Si Double Heteroiunction Bipolar Transistor

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- Heterojunction Barrier Effects in Si/SiGe/Si Double Heteroiunction Bipolar Transistor
- Acta Electronica Sinica Issue 11, (1996)
- 作者机构：
  
  西安交通大学电子工程系微电子学研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN322.8
- Published：1996
- 稿件说明：
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[1]张万荣,曾峥,罗晋生.Si／SiGe／Si双异质结晶体管异质结势垒效应（HBE）研究[J].电子学报,1996(11):43-47.

张万荣, 曾峥, 罗晋生. Heterojunction Barrier Effects in Si/SiGe/Si Double Heteroiunction Bipolar Transistor[J]. Acta Electronica Sinica, 1996, (11).
[1]张万荣,曾峥,罗晋生.Si／SiGe／Si双异质结晶体管异质结势垒效应（HBE）研究[J].电子学报,1996(11):43-47. DOI：

张万荣, 曾峥, 罗晋生. Heterojunction Barrier Effects in Si/SiGe/Si Double Heteroiunction Bipolar Transistor[J]. Acta Electronica Sinica, 1996, (11). DOI：

摘要

本文研究了不同温度下Ｓｉ／ＳｉＧｅ／Ｓｉ双异质结晶体管（ＤＨＢＴ）异质结势垒效应（ＨＢＥ），研究发现，集电结（ＢＣ）处价带能量差△Ｅｖ越大，ＨＢＥ越明显，在给定的△Ｅｖ下，随着温度的降低，ＨＢＥ越显著。在低温下ＨＢＥ比常温下更严重地退化器件参数；基于以上研究结果，我们指出了减弱ＨＢＥ的有效方法，本研究结果对设计开发Ｓｉ／ＳｉＧｅ／ＳｉＨＢＴ，尤其对设计开发低温工作的微波功率Ｓｉ／ＳｉＧｅ／ＳｉＨＢＴ是非常重要的。

Abstract

The heterojunction barrier effects（HBE） in Si/SiGe/Si double heterojunction bipolar transistors （DHBTs） at various temperatures are studied.It is found that HBE becomes more evident with the increase of the valence-band discontinuity △Ev at the BC heterojunction.For a given △Ev at the BC heterojunction

as the temperature is reduced

HBE becomes more remarkable and seriously degrades HBT performance parameters.Based on above results

the effective measures to alleviate the HBE are proposed.These results will be very important for the design and development of low-temperature-operation microwave power SiGe HBT.

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