The Transformation of Arsenic in Ga（CH3）3—AsH3—H2 System during MOVPE Growth and Arsenic Abatement

闻瑞梅; 梁骏吾

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The Transformation of Arsenic in Ga（CH₃）₃—AsH₃—H₂ System during MOVPE Growth and Arsenic Abatement

更新时间：2025-12-08

- The Transformation of Arsenic in Ga（CH₃）₃—AsH₃—H₂ System during MOVPE Growth and Arsenic Abatement
- Acta Electronica Sinica Issue 2, (1997)
- 作者机构：
  
  中国科学院半导体研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304
- Published：1997
- 稿件说明：
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[1]闻瑞梅,梁骏吾.MOVPE生长Ga（CH_3）_3—AsH_3—H_2体系中砷的形态转化及砷的[J].电子学报,1997(02):76-78+88.

闻瑞梅, 梁骏吾. The Transformation of Arsenic in Ga（CH₃）₃—AsH₃—H₂ System during MOVPE Growth and Arsenic Abatement[J]. Acta Electronica Sinica, 1997, (2).
[1]闻瑞梅,梁骏吾.MOVPE生长Ga（CH_3）_3—AsH_3—H_2体系中砷的形态转化及砷的[J].电子学报,1997(02):76-78+88. DOI：

闻瑞梅, 梁骏吾. The Transformation of Arsenic in Ga（CH₃）₃—AsH₃—H₂ System during MOVPE Growth and Arsenic Abatement[J]. Acta Electronica Sinica, 1997, (2). DOI：

摘要

在热力学分析的基础上，计算了在Ｇａ（ＣＨ３）３—ＡｓＨ３—Ｈ２体系中在５００Ｋ—１２００Ｋ的温度范围内，可能的含砷及砷化物的形态和浓度．同时通过大量的模拟实验找出了去除尾气中砷的最好方法，还研制出用三级逆向喷淋法的治理设备，对尾气进行治理．治理后的尾气中砷的含量符合国家排放标准．

Abstract

Based on thermodynamic analysis

the possible species containing arsenic and their concentrations at temperature from 500K to 1200K are calculated for Ga （CH3）3 - AsH3 - H2 system. A new method for arsenic abatement has been proposed through numerous simulation experiments. In order to improve the efficiency of arsenic abatement a three stage

counter flow showerbath has been inverstigated. The arsenic concentration in gases meets the State Standard for arsenic emission.

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