On the Analysis and Comparison for En—In Noise of Three Configurations of Transistor Amplifier

王军; 戴逸松

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On the Analysis and Comparison for En—In Noise of Three Configurations of Transistor Amplifier

更新时间：2025-12-08

- On the Analysis and Comparison for En—In Noise of Three Configurations of Transistor Amplifier
- Acta Electronica Sinica Issue 2, (1997)
- 作者机构：
  
  吉林工业大学电子工程系
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN72
- Published：1997
- 稿件说明：
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[1]王军,戴逸松.晶体管放大器三种组态的En—In人噪声分析与比较[J].电子学报,1997(02):93-95+99.

王军, 戴逸松. On the Analysis and Comparison for En—In Noise of Three Configurations of Transistor Amplifier[J]. Acta Electronica Sinica, 1997, (2).
[1]王军,戴逸松.晶体管放大器三种组态的En—In人噪声分析与比较[J].电子学报,1997(02):93-95+99. DOI：

王军, 戴逸松. On the Analysis and Comparison for En—In Noise of Three Configurations of Transistor Amplifier[J]. Acta Electronica Sinica, 1997, (2). DOI：

摘要

准确评价晶体管三种组态的噪声性能是低噪声放大器电路组态优化设计的关键．本文在晶体管三种组态Ｅｎ—Ｉｎ人噪声分析等方面给出了若干新结果．

Abstract

Evaluating the noise performances of three configurations of transistor amplifier accurately is the crux of optimization design of circuit configurations for low--noise amplifier. New results about En-In noise analysis of three configurations of transistor are presented in this paper.

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