Modeling Analysis of Photoeletronic Performance of Multijunction a-Si Based Alloy Solar Cells

吴春亚; 耿新华; 孙钟林

您当前的位置：

首页 >

文章列表页 >

Modeling Analysis of Photoeletronic Performance of Multijunction a-Si Based Alloy Solar Cells

更新时间：2025-12-08

- Modeling Analysis of Photoeletronic Performance of Multijunction a-Si Based Alloy Solar Cells
- Acta Electronica Sinica Issue 8, (1996)
- 作者机构：
  
  南开大学光电子所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TM914.401
- Published：1996
- 稿件说明：
移动端阅览
[1]吴春亚,耿新华,孙钟林.非晶硅基合金多结太阳电池光电特性的模拟计算分析[J].电子学报,1996(08):37-43.

吴春亚, 耿新华, 孙钟林. Modeling Analysis of Photoeletronic Performance of Multijunction a-Si Based Alloy Solar Cells[J]. Acta Electronica Sinica, 1996, (8).
[1]吴春亚,耿新华,孙钟林.非晶硅基合金多结太阳电池光电特性的模拟计算分析[J].电子学报,1996(08):37-43. DOI：

吴春亚, 耿新华, 孙钟林. Modeling Analysis of Photoeletronic Performance of Multijunction a-Si Based Alloy Solar Cells[J]. Acta Electronica Sinica, 1996, (8). DOI：

摘要

本文提出以各子电池的载流子输运方程为基础、用串联等效的方法模拟多结电池的Ｊ－Ｖ特性．并用该方法模拟分析了Ｐ／Ｉ界面态．Ｐ／Ｉ缓冲层带隙梯度对Ｇｌａｓｓ／ＴＣＯ／ａ－Ｓｉ／ａ－Ｓｉ／Ａｌ双结电池光电特性的影响、各子电池本征层为常数带隙的Ｇｌａｓｓ／ＴＣＯ／ａ－Ｓｉ／ａ－Ｓｉ／ａ－ＳｉＧｅ／Ａｌ三结电池的光电特性及其所存在的优势．

Abstract

Based on the carrier transportation equations of each subcell and equivalent series connection theory

a method of modeling the J-V. characteristics of multijunction solar cells is presented. With the computed results

the effects of P/I interface state and band-gap gradient of P/I buffer layer on the photoelectronic performance of Glass/TCO/a-Si/a-Si/Al tandem cells are analysed. The estimated performance and advantages of Glass/TCO/a-Si/a-Si/a-SiGe/Al triple cells are also presented.

关键词

Keywords

references

Views

114

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

⁰