Numerical Simulation for Coupled-Cavity Slow-Wave Structure by Using MAFIA Code

张国兴; 戴卢富; 刘准

您当前的位置：

首页 >

文章列表页 >

Numerical Simulation for Coupled-Cavity Slow-Wave Structure by Using MAFIA Code

更新时间：2025-12-08

- Numerical Simulation for Coupled-Cavity Slow-Wave Structure by Using MAFIA Code
- Acta Electronica Sinica Issue 6, (1997)
- 作者机构：
  
  1. 东南大学电子工程系
  2. 电子工业部第１２研究所
  3. 中国大功率微波电真空器件技术国防科技重点实验室学术委员会
  4. 东南大学电子工程系电子工业部第１２研究所中国大功率微波电真空器件技术国防科技重点实验室学术委员会
- 作者简介：
- 基金信息：
- DOI：
  CLC： TP391.9
- Published：1997
- 稿件说明：
移动端阅览
[1]张国兴,戴卢富,刘准.MAFIA软件模拟三维耦合腔慢波结构[J].电子学报,1997(06):1-5.

张国兴, 戴卢富, 刘准. Numerical Simulation for Coupled-Cavity Slow-Wave Structure by Using MAFIA Code[J]. Acta Electronica Sinica, 1997, (6).
[1]张国兴,戴卢富,刘准.MAFIA软件模拟三维耦合腔慢波结构[J].电子学报,1997(06):1-5. DOI：

张国兴, 戴卢富, 刘准. Numerical Simulation for Coupled-Cavity Slow-Wave Structure by Using MAFIA Code[J]. Acta Electronica Sinica, 1997, (6). DOI：

摘要

本文详细描述了耦合腔慢波结构色散，耦合阻抗数值模拟的原理及方法．模拟过程是由ＭＡＦＩＡ软件包的频域解程序完成的．其结果与实测值、Ａｒｇｕｓ软件模拟值相比较，色散误差小于１％．最后，讨论了两种拟合色散曲线的方法，证实Ｃｕｒｎｏｗ方程拟合最佳．

Abstract

In this paper

the principle and basic method for the simulation of the dispersionand the coupling impedance are described in detail. Simulation procedure on the basis of MAFIAcode and frequency domain method is completed. After the comparison with the experimental results and another numerical calculation from Argus code

the errors in the dispersion are less than1%. Lastly

two mathematical fits are discussed

it is shown that Curnow equation fit is better.

关键词

Keywords

references

Views

122

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Reliability Evaluation for TWT with Small Samples

Study of Vane-Loaded Tape Helix Slow Wave Structure with Novel Discontinuous Supporting Dielectric Pillars

Numerical Simulation and Experimental Study of Photo-Bidirectional Negative Resistance Transistor

BEM Numerical Simulation of High Voltage MZ-JTE

Two Dimensional Numerical Simulation of Deep Submicron Thin-Film SOI MOSFET

Related Author

FONT

孙小菡

赵兴群

SUN Xiao-han

ZHAO Xing-qun

LIU Pan

FAN He-hong

WANG Wen-xiang

Related Institution

College of Physical Electronics of UEST of China

School of Electronic Information Engineering,Tianjin University

Dept,of Electronic Engineering,Xi’an Jiaotong University

西安交通大学电子工程系西安 710049

Institute of Microelectronics,Peking University,Beijing 100871)Shi Yongquan

⁰