The Study of The Characteristics of a-Si:H TFT With Thin Active Layer Structure

张少强; 徐重阳; 邹雪城; 赵伯芳; 周雪梅; 王长安; 戴永兵

您当前的位置：

首页 >

文章列表页 >

The Study of The Characteristics of a-Si:H TFT With Thin Active Layer Structure

更新时间：2025-12-08

- The Study of The Characteristics of a-Si:H TFT With Thin Active Layer Structure
- Acta Electronica Sinica Issue 2, (1997)
- 作者机构：
  
  华中理工大学团体电子学系
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN32
- Published：1997
- 稿件说明：
移动端阅览
[1]张少强,徐重阳,邹雪城,赵伯芳,周雪梅,王长安,戴永兵.薄有源层非晶硅薄膜晶体管特性的研究[J].电子学报,1997(02):53-56.

张少强, 徐重阳, 邹雪城, et al. The Study of The Characteristics of a-Si:H TFT With Thin Active Layer Structure[J]. Acta Electronica Sinica, 1997, (2).
[1]张少强,徐重阳,邹雪城,赵伯芳,周雪梅,王长安,戴永兵.薄有源层非晶硅薄膜晶体管特性的研究[J].电子学报,1997(02):53-56. DOI：

张少强, 徐重阳, 邹雪城, et al. The Study of The Characteristics of a-Si:H TFT With Thin Active Layer Structure[J]. Acta Electronica Sinica, 1997, (2). DOI：

摘要

本文研究了薄ａ－Ｓｉ：Ｈ有源层结构的ａ－Ｓｉ：ＨＴＦＴ的特性，实验结果表明，当ａ－Ｓｉ：Ｈ层的厚度小于一个临界值时，ａ－Ｓｉ：Ｈ厚度的变化对ａ－Ｓｉ：ＨＴＦＴ静态特性的影响明显增大．文中详细分析了有源层背面空间电荷层对ａ－Ｓｉ：ＨＴＦＴ特性的影响，从表面有效空间电荷层的概念出发，从理论上分析了有源层厚度与阈值电压的关系，计算的临界有源层厚度为１３０ｎｍ，这与实验结果基本一致．关键词

Abstract

The a-St: H TFT with thin active layer structure is studied in this paper. The experimental results show that the characteristics of a-Si: H TFT vary when the a-Si: H thickness is smaller than some critical value. The effects of the space charge in the active layer rear surface on the a-Si: H TFT characteristics are discussed in detail. The dependence of the threshold voltage on the active layer thickness is calculated with the effective surface space charge layer model

and the critical active layer thickness is 130nm

which is baSically consistent with experiment results.

关键词

Keywords

references

Views

235

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Experimental Research for Field-Enhanced a-Si:H Photoemitter

The Study of Integrated Type Full Color Sensor with a-SiC/a-Si PIN Heterojunction

Related Author

Hai Yuhan and Chen Yuanxin

陈远星

Xu Zhongyang

Wang Changan

Zhou Xuemei

Zou Xuecheng and Zhao Bofang

赵伯芳

Related Institution

Institute of Electronics, Academia Sinica

中国科学院电子学研究所北京 100080

Dept. of Solid State Electr-onics, Huazhong University of Science and Technology

华中理工大学固体电子学系武汉 430074

⁰